Nanotechnology enables in principle a precise mapping from design to device but relied so far on human intuition and simple optimizations. In nanophotonics, a central question is how to make devices in which the light-matter interaction strength is limited only by materials and nanofabrication. Here, we integrate measured fabrication constraints into topology optimization, aiming for the strongest possible light-matter interaction in a compact silicon membrane, demonstrating an unprecedented photonic nanocavity with a mode volume of V ~ 3 × 10−4 λ3, quality factor Q ~ 1100, and footprint 4 λ2 for telecom photons with a λ ~ 1550 nm wavelength. We fabricate the cavity, which confines photons inside 8 nm silicon bridges with ultra-high aspect ratios of 30 and use near-field optical measurements to perform the first experimental demonstration of photon confinement to a single hotspot well below the diffraction limit in dielectrics. Our framework intertwines topology optimization with fabrication and thereby initiates a new paradigm of high-performance additive and subtractive manufacturing.
Optical nanocavities confine and store light, which is essential to increase the interaction between photons and electrons in semiconductor devices, enabling, e.g., lasers and emerging quantum technologies. While temporal confinement has improved by orders of magnitude over the past decades, spatial confinement inside dielectrics was until recently believed to be bounded at the diffraction limit. The conception of dielectric bowtie cavities (DBCs) shows a path to photon confinement inside semiconductors with mode volumes bound only by the constraints of materials and nanofabrication, but theory was so far misguided by inconsistent definitions of the mode volume and experimental progress has been impeded by steep nanofabrication requirements. Here we demonstrate nanometer-scale photon confinement inside 8 nm silicon DBCs with an aspect ratio of 30, inversely designed by fabrication-constrained topology optimization. Our cavities are defined within a compact device footprint of 4 lambda^2 and exhibit mode volumes down to V = 3E-4 lambda^3 with wavelengths in the lambda = 1550 nm telecom band. This corresponds to field localization deep below the diffraction limit in a single hotspot inside the dielectric. A crucial insight underpinning our work is the identification of the critical role of lightning-rod effects at the surface. They invalidate the common definition of the mode volume, which is prone to gauge meretricious surface effects or numerical artefacts rather than robust confinement inside the dielectric. We use near-field optical measurements to corroborate the photon confinement to a single nanometer-scale hotspot. Our work enables new CMOS-compatible device concepts ranging from few- and single-photon nonlinearities over electronics-photonics integration to biosensing.
We are pleased to present this feature issue, coordinated between the Journal of the Optical Society of America B (JOSA B) and the Journal of Lightwave Technology (JLT), on fundamental and applied aspects of slow light. The joint issue between the two journals reflects the tremendous breadth of this field; it is the strong feeling of the editors that research in slow light spans both fundamental and applied issues, and for this reason a joint venture between the two journals was in order.
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