Highly Reliable GaN-MOSFETs with High Channel Mobility Gate by Selective-Area Crystallization

Kajiwara, Y.; Shindome, Aya; Mukai, Akira; Ono, Hiroshi; Kato, Daimotsu; Kuraguchi, Masahiko; Nunoue, Shinya

doi:10.1109/ispsd46842.2020.9170119

Cited by 4 publications

(6 citation statements)

References 3 publications

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“…To deactivate Si impurity incorporated at a regrowth interface, UV treatment was applied as a pretreatment for regrowth in this study. [ 11 ] Figure shows schematic diagrams of regrown HEMT structures. Regrown HEMT structures of AlGaN regrowth and AlGaN/GaN regrowth were compared in terms of their effectiveness in reducing sheet resistance.…”

Section: Methodsmentioning

confidence: 99%

“…A GaN channel device as a reference is also fabricated same process of AlGaN/GaN regrowth on a GaN template. [ 11 ]…”

Section: Methodsmentioning

confidence: 99%

“…A GaN channel device as a reference is also fabricated same process of AlGaN/GaN regrowth on a GaN template. [11] Recessed structures were then formed for both types of devices by SAG. Next, the mask SiO 2 layer was removed and 30 nm thick SiO 2 was deposited as a gate insulator on the recessed structure by atomic layer deposition followed by postdeposition annealing under N 2 ambient.…”

Section: Fabrication and Characterization Of Thin Algan/gan Mos-hfets...mentioning

confidence: 99%

“…Recessed-gate GaN-metal oxide semiconductor field effect transistors (MOSFETs) have recently been investigated with a view to improving device performance. [5][6][7][8][9][10][11][12] In the fabrication process of recessed-gate MOSFETs, reactive ion etching (RIE) is performed to remove the AlGaN barrier layer in the recessed structure. However, the etched surface causes degradation of performance and reliability of the MOS devices.…”

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confidence: 99%

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Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth Technique

Tajima

Hikosaka

Nunoue

2023

Physica Status Solidi (a)

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Herein, a recessed‐gate AlGaN/GaN metal oxide semiconductor heterojunction field‐effect transistor (MOS‐HFET) with an AlGaN back‐barrier layer fabricated by a selective area regrowth (SAG) technique is investigated. A recessed‐gate structure enables normally off operation required for power‐switching applications. A thin AlGaN/GaN channel and the AlGaN back‐barrier structures are fabricated on a Si substrate by metal–organic chemical vapor deposition. The 50 nm thick, thin GaN channel layer with a smooth surface is grown on the AlGaN back‐barrier layer. A recessed‐gate structure is successfully formed by SAG of an AlGaN/GaN layer on the thin AlGaN/GaN layer. The regrown AlGaN/GaN high electron mobility transistor structure shows lower sheet resistance owing to high concentration and high mobility of a two‐dimensional electron gas. Transfer characteristics of the thin AlGaN/GaN channel MOS‐HFETs show normally off operation as a consequence of using the AlGaN back‐barrier structure. Channel mobility becomes five times higher than that of GaN channel in the case of using the thin AlGaN/GaN channel. These results indicate that the regrown thin AlGaN/GaN channel MOS‐HFET has the potential to realize low on‐resistance and normally off operation.

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Section: Methodsmentioning

confidence: 99%

“…A GaN channel device as a reference is also fabricated same process of AlGaN/GaN regrowth on a GaN template. [ 11 ]…”

Section: Methodsmentioning

confidence: 99%

Section: Fabrication and Characterization Of Thin Algan/gan Mos-hfets...mentioning

confidence: 99%

mentioning

confidence: 99%

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Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth Technique

Tajima

Hikosaka

Nunoue

2023

Physica Status Solidi (a)

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“…Several important physical models have also been considered, such as narrowing of the band gap, high field saturation, doping dependency and Shockley-Read-Hall [17]. The mobility of the 2DEG under the gate has been set as 680 cm 2 /V•s [18] and the electron mobility of the MIS interface has been set as 100 cm 2 /V•s [19] because of the etch damage.…”

Section: Device Structure and Mechanismmentioning

confidence: 99%

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

et al. 2022

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A novel double gates flip-structure enhancement-mode (E-mode) high electron mobility transistor with step field plate (DFF HEMT) is proposed. It features face-to-face double gates, including a top trench MIS gate with a step field plate and a bottom planar MIS gate, which is shorted together. In the on-state, the double gates not only can restore the 2DEG by the higher electric potential, but also can form the electron accumulation layers, and thus increase the saturation output current and reduce the on-resistance. The face-to-face double gates together deplete the 2DEG by using the work function difference to realize E-mode, instead of by etching the AlGaN layer under the gate for the conventional MIS gate E-mode HEMT. The double-gate structure not only avoids etch damage, but also maintains both high threshold voltage and low on-resistance. Meanwhile, the step gate field plate modulates E-field distribution to increase the BV. In order to easily fabricate, the trench gate with step field plate must be located on the top of device, forming the flip-structure. The flip-structure is also beneficial to decrease the leakage current in the substrate. The simulated Vth, BV and Id of the DFF HEMT are 0.8 V, 465 V and 494 mA/mm, respectively. The FOM of the DFF HEMT is 79.8% and 444.2% higher than those of the conventional MIS-FP HEMT and MIS HEMT.

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Suppression of current collapse by Access-region Carrier Enhancement technique in GaN-MOSFETs

Kajiwara

Ono

Kato

et al. 2022

2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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Highly Reliable GaN-MOSFETs with High Channel Mobility Gate by Selective-Area Crystallization

Cited by 4 publications

References 3 publications

Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth Technique

Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth Technique

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

Suppression of current collapse by Access-region Carrier Enhancement technique in GaN-MOSFETs

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