Highly Oriented Nb-Doped Lead Titanate Thin Films by Reactive Sputtering:  Electrical Properties

Ibrahim, Ricardo Cury; Horiuchi, Toshihisa; Shiosaki, Tadashi; Matsushige, Kazumi

doi:10.1143/jjap.37.6060

Cited by 3 publications

(1 citation statement)

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“…Therefore, far from lowering the resistivity, slightly doping of Nb actually increases it. 28 Secondly, the extra electrons provided by Nb are not totally itinerant, instead they are mainly locate around one Ti orbits. This will be further discussed later in the present article based on our first principle calculations.…”

Section: Resultsmentioning

confidence: 99%

Coexistence of polar distortion and metallicity in PbTi1−xNbxO3

Jin

et al. 2017

Phys. Rev. B

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Abstract:Ferroelectricity has been believed unable to coexist with metallicity since the free carriers can screen the internal coulomb interactions of dipoles. Very recently, one kind of materials called as ferroelectric metal was reexamined. Here, we report the coexistence of metallicity and polar distortion in a new candidate for ferroelectric metal PbTi1-xNbxO3 via doping engineering. The ferroelectric-like polar distortion in all the doped PbTi1-xNbxO3, with x ranging from 0.04 to 0.12, was confirmed by the piezoresponse force microscopy and the scanning transmission electron microscopy measurements. PbTi1-xNbxO3 films become more conductive with more doping density, and emerge a metallic behavior when x reaches 0.12. Our first principle calculations further revealed that the doped Nb ions in the films can only provide free electrons, but not be able to damage the dipoles in unite cells even with the heaviest doping density of 0.12 due to their little impact on the off-centering of the Ti ions. We believe that these results confirm a feasibility of realizing the coexistence of metallicity and polar distortion for other ferroelectrics in a common way, and motivate the synthesis of some

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Section: Resultsmentioning

confidence: 99%

Coexistence of polar distortion and metallicity in PbTi1−xNbxO3

Jin

et al. 2017

Phys. Rev. B

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Photoresponse of Zener tunneling junctions of Pb(Ti,Zr)O3/SrTiO3 at low temperature

Watanabe

Okano

2003

Journal of Applied Physics

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Temperature ͑T͒ dependent current-voltage (IV) characteristics of epitaxial Pb(Ti,Zr)O 3 /SrTiO 3 heterojunctions exhibiting the characteristics of Zener tunneling are measured in the dark and in the light. Ultraviolet light is found to induce a prominent photovoltaic effect at all T down to at least 50 K, while the open circuit voltage increases with decreasing T. In the dark the reverse bias current increases with decreasing T. In the light the reverse bias current at low T is a superposition of a photovoltaic current and a small component that is identical to the reverse bias current in the dark. These observations indicate that the anomalous T dependence of the reverse bias current in the dark is attributable to the tunneling from the Pb(Ti,Zr)O 3 band to the SrTiO 3 band. Additionally, short pulse voltages modulate the tunneling current, which is retained.

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