Highly Oriented Nb-Doped Lead Titanate Thin Films by Reactive Sputtering:   Fabrication and Structure Analyses

Ibrahim, Ricardo Cury; Horiuchi, Toshihisa; Shiosaki, Tadashi; Matsushige, Kazumi

doi:10.1143/jjap.37.4539

Cited by 6 publications

(1 citation statement)

References 26 publications

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“…Due to the similar sizes between Nb 5+ (r = 0.64 Å) and Ti 4+ (r = 0.61 Å) ions, substitution of Ti by Nb does not introduce much disorder or lattice distortion in the primary PbTiO3 tetragonal structure. 22 The θ-2θ Xray diffraction (XRD) and the X-ray absorption spectroscopy (XAS) confirm this Ti 4+ substitution in our fabricated PTNO films rather than the formation of new compounds (see supporting information Fig. S1).…”

Section: Resultssupporting

confidence: 52%

Coexistence of polar distortion and metallicity in PbTi1−xNbxO3

Jin

et al. 2017

Phys. Rev. B

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Abstract:Ferroelectricity has been believed unable to coexist with metallicity since the free carriers can screen the internal coulomb interactions of dipoles. Very recently, one kind of materials called as ferroelectric metal was reexamined. Here, we report the coexistence of metallicity and polar distortion in a new candidate for ferroelectric metal PbTi1-xNbxO3 via doping engineering. The ferroelectric-like polar distortion in all the doped PbTi1-xNbxO3, with x ranging from 0.04 to 0.12, was confirmed by the piezoresponse force microscopy and the scanning transmission electron microscopy measurements. PbTi1-xNbxO3 films become more conductive with more doping density, and emerge a metallic behavior when x reaches 0.12. Our first principle calculations further revealed that the doped Nb ions in the films can only provide free electrons, but not be able to damage the dipoles in unite cells even with the heaviest doping density of 0.12 due to their little impact on the off-centering of the Ti ions. We believe that these results confirm a feasibility of realizing the coexistence of metallicity and polar distortion for other ferroelectrics in a common way, and motivate the synthesis of some

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Section: Resultssupporting

confidence: 52%

Coexistence of polar distortion and metallicity in PbTi1−xNbxO3

Jin

et al. 2017

Phys. Rev. B

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Preparation and characterization of Pb(Nb,Ti)O3 thin films by metalorganic chemical vapor deposition

Matsuzaki

Funakubo

1999

Journal of Applied Physics

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Lead niobium titanate, Pb(Nb,Ti)O3, thin films were prepared on various substrates by metalorganic chemical vapor deposition from the Pb(C11H19O2)2–Nb(O⋅C2H5)5–Ti(O⋅i-C3H7)4–O2 system. Polycrystalline films with (111) orientation and epitaxially grown films with c-axis orientation were deposited on the (111)Pt/Ti/SiO2(100)Si and PbTiO3/(111)Pt/Ti/SiO2/(100)Si substrates, and (100)SrRuO3//(100)LaAlO3 substrate, respectively, at 620 °C. Nb content in the film can be controlled only by changing the input gas flow rate of Nb(O⋅C2H5)5 under the excess gas flow rate of Pb(C11H19O2)2. The composition of the film was independent of the deposition temperature from 400 to 620 °C. The single phase of Pb(Nb,Ti)O3 was deposited up to the Nb content of about 5 at % and pyrochlore phase was codeposited above this Nb content. Leakage current density decreased with the increasing Nb content in the film up to 6.5 at %. Coercive field (Ec) of the film was about 130 kV/cm and was independent of the Nb content and the kinds of substrates. On the other hand, the remanent polarization (Pr) of the film on the (111)Pt/Ti/SiO2/(100)Si substrate increased from 9 to 29 μC/cm2 with the increasing Nb content from 2.1 to 4.8 at %. Pr of the film on the (100)SrRuO3//(100)LaAlO3 substrate was smaller than those of the (111)Pt/Ti/SiO2/Si and PbTiO3/(111)Pt/Ti/SiO2/Si substrates.

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