2013
DOI: 10.1002/cta.1891
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Highly linear wide‐swing continuous tuning of CMOS transconductors

Abstract: SUMMARY A technique to improve the input and output range of CMOS transconductors with resistive current division for continuous tuning is presented. Using it, a tunable transconductor is proposed which features high linearity over a wide input range and simplicity. Measurement results of the transconductor, fabricated in a 0.5 µm CMOS process, show an IM3 of −66 dB for a ±1.65 V supply and two input tones centered at 1 MHz of 1 Vpp each, and only 0.7 mW of power consumption. This represents an improvement of … Show more

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Cited by 6 publications
(6 citation statements)
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References 29 publications
(36 reference statements)
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“…Concerning low-voltage low-power transconductor design, the use of the substrate as active terminal [12,13] or the use of FGMOS transistors for reducing the threshold voltage and compressing the signal swing to increase the operation range [14][15][16] are worth mentioning, to name a few techniques. Moreover, the prevalent low-power consumption requirements make the use of class AB stages, such as the classical structure of Monticelli [17] or techniques based on QFGMOS transistors [18,19], suitable and even necessary.…”
Section: Design Techniques At Basic Cell Level (Transconductor)mentioning
confidence: 99%
See 1 more Smart Citation
“…Concerning low-voltage low-power transconductor design, the use of the substrate as active terminal [12,13] or the use of FGMOS transistors for reducing the threshold voltage and compressing the signal swing to increase the operation range [14][15][16] are worth mentioning, to name a few techniques. Moreover, the prevalent low-power consumption requirements make the use of class AB stages, such as the classical structure of Monticelli [17] or techniques based on QFGMOS transistors [18,19], suitable and even necessary.…”
Section: Design Techniques At Basic Cell Level (Transconductor)mentioning
confidence: 99%
“…The proposed method allows decreasing the number of active elements (transconductors) of the filter. Furthermore, techniques based on quasi-FGMOS (QFGMOS) transistors have been proposed for linearizing triode transistors in source degeneration structures [11].Concerning low-voltage low-power transconductor design, the use of the substrate as active terminal [12,13] or the use of FGMOS transistors for reducing the threshold voltage and compressing the signal swing to increase the operation range [14][15][16] are worth mentioning, to name a few techniques. Drawbacks inherent to the use of FGMOS transistors are analyzed, such as large occupied area, high sensitivity to mismatch, or parasitic zeros in transfer functions.…”
mentioning
confidence: 99%
“…The input signal is directly fed to the input of the first transconductor, and also the other transconductors are fed by full‐swing signals (Figure ). A straightforward way to improve linearity is to use source degeneration in the differential pair, by using either a resistance or MOS transistors operating in the triode region, as in . Topologies presented in are based on polynomial distortion cancelation by using two cross‐coupled differential pairs with different transconductance and distortion coefficients.…”
Section: Optimization Of Transconductors and Transistor‐level Designmentioning
confidence: 99%
“…So far, many techniques have been presented to linearize an OTA. Adaptive biasing, resistive source/gate degeneration with the passive or active resistors, using cross‐coupled differential pairs, and various methods of derivative superposition are the main techniques that have been used to linearize OTAs . In some cases, two or more techniques are combined to obtain higher linearity .…”
Section: Introductionmentioning
confidence: 99%