Highly Linear 0.18-&lt;tex&gt;$mu$&lt;/tex&gt;m CMOS Power Amplifier With Deep n-Well Structure

Kang, Jihoon; Yu, Daekyu; Yang, Youngoo; Kim, Bumman

doi:10.1109/jssc.2006.874059

Cited by 46 publications

(22 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The maximum output power is over 24dBm, and the maximum P AE is over 34%. Table I compares the results with those from previous works [6][7][8][9]. Notably, [7] and [8] use off-board output matching networks.…”

Section: B Load-pull Match and Sensitivity Of Inductormentioning

confidence: 90%

A 2.5GHz CMOS power amplifier for WiMAX application

Chen

Shih

Chang

et al. 2010

The 2010 International Conference on Green Circuits and Systems

View full text Add to dashboard Cite

This paper demonstrates the design of a radio frequency (RF) class A power amplifiers for WiMAX application using TSMC O.18J1m CMOS technology. A novel two-stage cascode common-source amplifier and a load-pull output matched power amplifier are designed for the WiMAX application of 2.5GHz transmitting frequency. The designed power amplifier exhibits 19.8dBm of I-dB compression point, 24.1dBm of output power, 35% power-added-efficiency (P AE), and 23.3dB of power gain under 3.3V and 1.8V supply voltages. The power consumption is about 827.34mW. A small chip size of O.8lxO.65 mm2 is achieved with all matching networks.

show abstract

Section: B Load-pull Match and Sensitivity Of Inductormentioning

confidence: 90%

A 2.5GHz CMOS power amplifier for WiMAX application

Chen

Shih

Chang

et al. 2010

The 2010 International Conference on Green Circuits and Systems

View full text Add to dashboard Cite

show abstract

“…1 shows a simplified schematic of the suggested two stage single-ended CMOS linear PA. A single-ended topology is chosen for easier integration, costeffectiveness, and avoidance of baluns although a differential configuration has the advantage of the even harmonics control. [5] To reduce the noise coupling with other components on the same silicon substrate, a deep Nwell [6] is employed for both the driver and power cells. For the reliability of the devices at 3.4V operation, a 0.4-um thick-oxide NMOS transistor is used in the power stage cascode CG transistor, and 0.18-um NMOS transistors are used for the both of CG and CS in the driver stage to compensate for the low RF power gain of the thick-oxide CG transistor in the power stage.…”

Section: Circuit Design Methodologymentioning

confidence: 99%

A 40% PAE linear CMOS power amplifier with feedback bias technique for WCDMA applications

Jeon

Lee²,

Lee³

et al. 2010

2010 IEEE Radio Frequency Integrated Circuits Symposium

View full text Add to dashboard Cite

-A highly efficient CMOS linear power amplifier for WCDMA applications with feedback bias technique is presented. The method involves connecting the gates of common-gate devices of the driver stage and the power stage in cascode configurations by a feedback network for enhancing linearity. To achieve high efficiency and linearity simultaneously, large-signal IMD minimum (IMD sweet spot) is properly used at the desired output power level. The proposed PA was fabricated in a 0.18-μm CMOS technology. The experimental results demonstrate a gain of 26 dB, a maximum output power of 26 dBm with 46.4% of peak PAE, and a linear output power of 23.5 dBm with 40% PAE using a 3GPP WCDMA modulated signal. Both simulation and measurement results show an excellent largesignal IMD minimum at the output power using a WCDMA modulated signal.

show abstract

“…Among the circuit parameters, the input capacitance has a major effect on the linearity of largesignal circuits. The deep n-well structure of NMOS reduces distortions caused by nonconstant gate-source capacitance [10]. Also, capacitance compensation using a PMOS device is widely used in CMOS PAs [11,12].…”

Section: Linearization Techniques In Cmos Power Amplifiersmentioning

confidence: 99%

RF CMOS Power Amplifiers for Mobile Terminals

Son¹,

Koo²,

Lee³

et al. 2009

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

Abstract-Recent progress in development of CMOS power amplifiers for mobile terminals is reviewed, focusing first on switching mode power amplifiers, which are used for transmitters with constant envelope modulation and polar transmitters. Then, various transmission line transformers are evaluated. Finally, linear power amplifiers, and linearization techniques, are discussed. Although CMOS devices are less linear than other devices, additional functions can be easily integrated with CMOS power amplifiers in the same IC. Therefore, CMOS power amplifiers are expected to have potential applications after various linearity and efficiency enhancement techniques are used.

show abstract

Highly Linear 0.18-<tex>$mu$</tex>m CMOS Power Amplifier With Deep n-Well Structure

Cited by 46 publications

References 12 publications

A 2.5GHz CMOS power amplifier for WiMAX application

A 2.5GHz CMOS power amplifier for WiMAX application

A 40% PAE linear CMOS power amplifier with feedback bias technique for WCDMA applications

RF CMOS Power Amplifiers for Mobile Terminals

Contact Info

Product

Resources

About