Highly integrated S and C-band internally-matched Quasi-MMIC power GaN devices

Yoon

et al. 2016

This article presents a high‐efficiency power amplifier using quasi‐MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate‐source voltage waveform control with Class‐F operation achieves significant efficiency improvements. The quasi‐MMIC technology using silicon‐integrated passive devices (Si‐IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class‐F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2178–2182, 2016

Section: Introductionmentioning

confidence: 99%

A high‐efficiency gan power amplifier with harmonic control based on Si‐IPDS

Yoon

et al. 2016

“…now and the epitaxial growth process is still very expensive. Therefore, hybrid‐IC technology based on GaAs or silicon IPD was proposed to make a low‐cost GaN‐IC or module, which maintained the high performance and small form factor .…”

Section: Introductionmentioning

confidence: 99%

Compact and low‐profile GaN hybrid‐IC based on TSV Si‐interposer technology

Kim

Kim³

2017

This article presents new compact, low‐profile GaN hybrid‐IC technologies. Three different kinds of IC integration methods based on a silicon substrate are studied to make GaN hybrid‐ICs. First, two hybrid‐IC LNAs are designed and fabricated to estimate their RF performances with the combination of a discrete transistor and silicon integrated passive devices (IPDs) in which an input and output matching networks are integrated as thin‐film devices. A wire‐bonding method is used to make interconnections between the two discrete devices. Second, the GaN HEMT transistor is fully embedded in the silicon interposer using a cavity to make a low‐profile package. All kinds of passive components for matching networks are also integrated on the Si‐interposer and their interconnections are made using lithography technology. Third, the TSV technology is added to the embedded IC package to make an easily assembled hybrid‐IC. In this hybrid IC, the GaN transistor is embedded in the Si‐interposer and I/Os are located under the package bottom as in a Quad Flat No‐leads (QFN) package structure. The size of the realized hybrid GaN power LNA is only 1.7 × 1.5 × 0.15 mm3 and it is almost the same as the commercial MMIC size. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:1087–1092, 2017

“…Recently, a quasi‐MMIC technology has been reported that can replace passive components in the GaN area with other substrates to lower the manufacturing cost . This approach provides a small size of matching networks that is close to MMIC dimensions and shows high design flexibility, a high level of repeatability, and the possibility of integrating biasing networks.…”

Section: Introductionmentioning

confidence: 99%

“…This approach provides a small size of matching networks that is close to MMIC dimensions and shows high design flexibility, a high level of repeatability, and the possibility of integrating biasing networks. Quasi‐MMIC power amplifiers are reported that use gallium arsenide (GaAs) based input and output matching . A power amplifier using silicon integrated passive devices (IPDs) has also been reported .…”

Section: Introductionmentioning

confidence: 99%

An X‐band RLC matched power amplifier using quasi‐MMIC technology

Kim

et al. 2015

This article presents an RLC matched power amplifier using quasi‐MMIC technology in the X‐band. The power amplifier consists of a GaN HEMT power device and several passive components including inductors, capacitors, resistors, and transmission lines using a silicon integrated passive device (IPD) process. The standard silicon process can drive the solution to cost down compared with conventional microwave monolithic integrated circuit (MMIC) technology. This technology using silicon IPDs provides small size matching networks close to MMIC dimensions. The input matching network using the RLC matched circuit is designed to obtain broadband characteristic and gain flatness. The dimensions of input and output silicon IPD are 1.5 mm × 1.2 mm and 1.9 mm × 2.2 mm, respectively, with a thickness of only 0.15 mm. The measured results show that the quasi‐MMIC power amplifier has a P3dB of more than 38.3 dBm with a drain efficiency of more than 51.2% in the frequency range from 8.2 to 10 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2803–2807, 2015