Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide

Das, Tanmoy; Chen, Xiang; Jang, Hee-Chang; Oh, Il‐Kwon; Kim, Hyungjun; Ahn, Jong Hyun

doi:10.1002/smll.201602101

Cited by 48 publications

(40 citation statements)

References 37 publications

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“…Pmax is found to be as low as 15.6~241.2 nW at VDD of 1.5~3.0 V, indicating rather low power consumption during switching. Figure 3(c) summarizes the VDD of the above mentioned reported inverters [13][14][15][16][17][18][19][20][26][27][28][29][30][31][32][33][34][35][36][37][38][39], commonly in range of 2~100 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 F o r P e e r R e v i e w V. Our inverter has realized the lowest VDD of 1.5 V, with yet high performance. Such low VDD lead to significantly low power consumption.…”

Section: Methodsmentioning

confidence: 99%

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Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption

Yuan

Yang

et al. 2018

IEEE Electron Device Lett.

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Oxide semiconductors are ideal candidates for flexible and transparent electronics. Here, we report complementary inverters based on p-type tin monoxide and n-type indium-gallium-zinc-oxide thin-film transistors. The inverters have a gain of 63 at a supply voltage, VDD, of 1.5 V with a maximum static power consumption of 15.6 nW, and a gain of 226 at a VDD of 3.0 V with a maximum power consumption of 241.2 nW. A five-stage ring oscillator (RO) based on the complementary inverters are able to operate at 1.04 kHz, with full amplitude oscillations at a VDD of 1.5 V. All the inverters and RO are fabricated on silicon wafers but at a maximum processing temperature of 225 o C, so that the results are relevant to possible flexible applications. The extremely low power consumption of nanowatt, high gain, kHz operation, and possible flexibility of the fabricated complementary components are well suited to meet the requirements of wearable electronics, internet of things technology, etc. Index Terms-Complementary inverter, indium gallium zinc oxide (InGaZnO or IGZO), tin monoxide (SnO), low-power, high gain, ring oscillator (RO), thin-film transistor (TFT).

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Section: Methodsmentioning

confidence: 99%

“…Most reported complementary inverters have power consumption in µW level [13-15, 18-20, 26-29]. Only very limited inverters have power consumptions in nW level, however, the low voltage-gains (of≤20) highly limit their applications [16,30].…”

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confidence: 99%

Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption

Yuan

Yang

et al. 2018

IEEE Electron Device Lett.

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“…This Perspective focuses on the mature technologies that are available in semiconductor fabrication plants ('fabs') today. It is also worth noting a number of encouraging recent developments with carbon nanotubes [12][13][14][15] and several two-dimensional semiconductors 16 , such as graphene 15,17,18 , black phosphorus 19 and chalcogenides [20][21][22][23] , which could provide next-generation flexible TFT IC technologies, either as novel standalone transistor technologies or by complementing existing TFTs. Furthermore, a key benefit of some TFT technologies is the possibility to use additive manufacturing techniques like printing, which could reduce costs [24][25][26][27][28][29] .…”

Section: Nature Electronicsmentioning

confidence: 99%

The development of flexible integrated circuits based on thin-film transistors

2018

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T hin-film transistors (TFTs) are currently the dominant technology for in-pixel switches and drivers in flat-panel displays. Trends in consumer electronics demand ever-higher display resolution and brightness, lower power consumption, and new features and form factors (such as curved and foldable displays). This drives TFT devices to deliver more complex functions than simply switching. For example, recent bezel-less displays delegate the task of row selection to TFT circuits integrated next to the pixel array. Such driver circuits comprise thousands of switches operating together -previously a job for silicon chips mounted around the display.Beyond displays, how far can thin-film circuits go in terms of replacing silicon complementary metal-oxide-semiconductor (CMOS) chips? Fig. 1 illustrates the key advantages of thin-film circuits on flexible substrates. The circuits can be fabricated on large substrates, thereby creating very thin, lightweight and ultra-flexible electronics 1,2 . Folding, rolling or crumpling such flexible circuits is possible without destroying the electronic functionality. Because of these properties, a flexible TFT-based microprocessor 3 (Fig. 1d) or thin-film near-field communication (NFC) tag (Fig. 1e) can, for example, be integrated imperceptibly into any object. TFT technologies also have considerable potential for fabrication on ultrathin stretchable substrates 4 that can be made porous to create breathable devices for contact with skin. With these features, thin-film integrated circuits (ICs) could be a game-changer for wearable electronics. Ultrathin, conformable ICs in the form of a tattoo could be used to monitor vital body parameters, communicating these parameters directly to a patient's smartphone or a medical database.In this Perspective, I discuss the potential of thin-film circuits on plastic substrates for the development of Internet of Things (IoT) and wearable applications. First I look at the different TFT technologies that can be realized on flexible substrates, and then discuss the impact TFT technology will have on circuit design at the level of digital logic gates and very-large-scale integration (VLSI) digital circuits. For the latter, I consider the use of thin-film ICs in the creation of low-cost radiofrequency identification (RFID) tags for everyday items. Flexible chips may initially be used to simply identify each item. Then, when the RFID chip is potentially replaced with a thinfilm NFC chip, standard smartphones and tablets equipped with NFC readers could identify objects and connect them to the cloud. Another advantage of thin-film IC technology is its potential to be combined with sensor or signage technology, thereby integrating more functionality into the objects, which is discussed in a section on analogue circuits. Finally, I will briefly examine the potential of silicon CMOS chip technology to be interfaced directly with TFT circuitry. TFT technologyThe development and optimization of transistor technologies are driven by four important figures of me...

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“…Insulator layer can also be introduced in the MS structure to form MIS structured photodetector . When metal oxides are used as the insulators, we can obtain the typical complementary metal–oxide–semiconductor (CMOS) structure and the core component of coupled charge devices (CCDs), which is the fundamental element of modern digital cameras.…”

Section: Photodetectors Based On Hybrid Structuresmentioning

confidence: 99%

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

et al. 2018

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Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

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Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide

Cited by 48 publications

References 37 publications

Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption

Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption

The development of flexible integrated circuits based on thin-film transistors

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

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