Highly efficient waveguide phase modulator for integrated optoelectronics

Alping, A.; Wu, Xiaocui; Hausken, T.; Coldren, L.A.

doi:10.1063/1.96992

Cited by 43 publications

(4 citation statements)

References 15 publications

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“…In addition, appropriate electrical driving schemes and resistance capacitance (RC) limitations have to be taken into account to reduce the device parasitic effects on the high frequency response of the device. We note that optical modulation based on free carrier effects in III-V semiconductors has also been investigated previously [26,27]. It was suggested that the device speed for a reversebiased pn junction is only limited by the RC constant.…”

Section: Introductionmentioning

confidence: 63%

High-speed optical modulation based on carrier depletion in a silicon waveguide

Liu¹,

Liao²,

Rubin³

et al. 2007

Opt. Express

593

280

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We present a high-speed and highly scalable silicon optical modulator based on the free carrier plasma dispersion effect. The fast refractive index modulation of the device is due to electric-field-induced carrier depletion in a Silicon-on-Insulator waveguide containing a reverse biased pn junction. To achieve high-speed performance, a travelling-wave design is used to allow co-propagation of electrical and optical signals along the waveguide. We demonstrate high-frequency modulator optical response with 3 dB bandwidth of ~20 GHz and data transmission up to 30 Gb/s. Such high-speed data transmission capability will enable silicon modulators to be one of the key building blocks for integrated silicon photonic chips for next generation communication networks as well as future high performance computing applications.

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Section: Introductionmentioning

confidence: 63%

High-speed optical modulation based on carrier depletion in a silicon waveguide

Liu¹,

Liao²,

Rubin³

et al. 2007

Opt. Express

593

280

View full text Add to dashboard Cite

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“…Here, the higher light confinement allows for minimizing the interaction (crosstalk) between adjacent components, thus enabling dense on-chip integration of photonic structures. During the past forty years, the vast majority of developments such as optical modulators/switches [27][28][29] or on-chip lasers [30,31], among others, have made use of 3D rectangular WGs.…”

Section: Overview Of Optical Waveguidingmentioning

confidence: 99%

Semiconductor optical waveguide devices modulated by surface acoustic waves

Crespo-Poveda¹,

Bühler²,

Sáez³

et al. 2019

J. Phys. D: Appl. Phys.

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This paper reviews the application of coherent acoustic phonons in the form of surface acoustic waves to control the response of semiconductor optical waveguide devices. We lay special emphasis on devices built upon three-dimensional rectangular waveguides, which offer excellent possibilities for integration due to the stronger confinement of the optical fields. We address the spatial distribution of the acoustic fields, as well as the excitation of surface acoustic waves in piezoelectric materials using interdigital transducers. The mechanisms responsible for the interaction between light and the acoustic modes in the optical waveguides, as well as the influence of waveguide parameters in the performance of the devices, are also discussed. Finally, we review the most important advances on the modulation of semiconductor optical waveguide devices built upon three-dimensional waveguides, and explore several exciting future technological possibilities. These include, among others, the generation of slow light in photonic crystal waveguides to enhance the sound-light interaction in the reviewed devices.

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“…The Franz-Keldysh electroabsorption coefficient is calculated using the weak-field approximation derived by Tharmalingham lO and Callaway 1 1.12: (2) (3) (4)…”

Section: Theorymentioning

confidence: 99%

Electrorefraction in GaAs and InGaAsP and its application to phase modulators

Alping¹,

Coldren²

1987

Journal of Applied Physics

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Articles you may be interested inControlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers High mobility in liquid phase epitaxial InGaAsP free of composition modulations Appl. Phys. Lett. 42, 886 (1983); 10.1063/1.93775Calculation of Auger rates in a quantum well structure and its application to InGaAsP quantum well lasers

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Highly efficient waveguide phase modulator for integrated optoelectronics

Cited by 43 publications

References 15 publications

High-speed optical modulation based on carrier depletion in a silicon waveguide

High-speed optical modulation based on carrier depletion in a silicon waveguide

Semiconductor optical waveguide devices modulated by surface acoustic waves

Electrorefraction in GaAs and InGaAsP and its application to phase modulators

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