2021
DOI: 10.1109/tie.2020.2970652
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Highly Efficient Single-Phase Direct AC-to-AC Converter With Reduced Semiconductor Count

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Cited by 33 publications
(24 citation statements)
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“…The volume of the capacitor is directly related to its maximum stored energy [39]. Therefore, this parameter is calculated for the proposed converters based on ( 29) and (33) while for the competitors is obtained according to the parameters presented in Table I.…”
Section: ) Reactive Elements A) Capacitorsmentioning
confidence: 99%
See 1 more Smart Citation
“…The volume of the capacitor is directly related to its maximum stored energy [39]. Therefore, this parameter is calculated for the proposed converters based on ( 29) and (33) while for the competitors is obtained according to the parameters presented in Table I.…”
Section: ) Reactive Elements A) Capacitorsmentioning
confidence: 99%
“…From this model, any required transfer function can be attained readily. Therefore, by applying some KVLs and KCLs to this circuit while the input voltage is assumed constant, the transfer function of the control to the voltage of C1, Gvc1-d(s) is obtained as (39). The Proposed HS -YSI [23] DA -YSI [24] O-YSI [25] LCD-qYSI [26] Fig.…”
Section: Small Signal Analysismentioning
confidence: 99%
“…The volume of a power converter is contributed by switching devices, heat sinks, and passive components. To compare the volumes of the proposed and counterpart buck-boost MCs [20]- [23], analytical methods in [21], [22], [30], and [31] are adapted to determine the switching devices power ratings and losses (which reflect the sizes of switching devices plus heat sinks) and stored energies of passive components (which reflect the volume of passive components). The buck-boost MC in [19] has already proved to have much higher switching devices power ratings/losses and passive component volumes [20], [21] and thus, not included for comparison.…”
Section: Comparative Evaluation Of Switching Devices Power Ratings/lo...mentioning
confidence: 99%
“…The production of the voltage and current stresses of a switching device is defined as its SDP, which can be regarded as a criterion for measuring the requirements of the semiconductors and consequently, a cost indicator of the system. The corresponding expressions are [38] ⎧ ⎪ ⎪ ⎨ ⎪ ⎪ ⎩ total peak SDP :…”
Section: Voltage and Current Stressesmentioning
confidence: 99%