Highly efficient pin-type OLEDs

Scalable Large-Area p–i–n Light-Emitting Diodes Based on WS2 Monolayers Grown via MOCVD

“…Besides the efficient electron (hole) injection from the ZnO (poly-TPD) layer into the WS 2 active material because of the low energy barriers for electrons (holes), the concept relies on the additional electron and hole blocking function of poly-TPD and ZnO-QDs, respectively, to accumulate electrons and holes in the active layer and enforce radiative recombination. This concept design is compatible with OLED and QLED approaches, forming a p–i–n junction with the active layer embedded between electron and hole supporting layers. − …”