Highly efficient non-degenerate four-wave mixing process in InAs/InGaAsP quantum dots

Lü, Zhenguo; Liu, J.R.; Raymond, S.; Poole, Philip J.; Barrios, Pedro; Poitras, Daniel; Sun, Fan; Pakulski, G.; Bock, Przemek J.; Hall, Trevor J.

doi:10.1049/el:20062152

Cited by 22 publications

(15 citation statements)

References 9 publications

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“…FWM [171][172][173] and cross gain modulation [174]. In the former case, a symmetric FWM efficiency between positive and negative detuning was observed by Lu et al [171], and the efficiency decreased by < 20 dB/decade with frequency detuning increased. A 40 ps pulse train with repetition rate 500 MHz was successufly detuned ut po 6.2 nm from the CW pump.…”

Section: High Speed Amplification and Signal Processingmentioning

confidence: 76%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: High Speed Amplification and Signal Processingmentioning

confidence: 76%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…The above results indicate that the external fiber cavities are controlling the lasing spectrum at low bias current, and that the three lasing modes are phase-correlated. This correlation is likely mediated through the strong FWM observed in QD gain media [12]. The FWM was examined more carefully at a low bias current.…”

Section: Optics Communicationsmentioning

confidence: 99%

THz optical pulses from a coupled-cavity quantum-dot laser

Liu

Lü

Poole

et al. 2012

Optics Communications

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Optical pulses are generated from a coupled-cavity quantum-dot (QD) laser consisting of a short QD-waveguide Fabry-Perot (F-P) cavity and three long external fiber Bragg grating (FBG) cavities. When the laser is biased at low operation current, the feedback from the external cavities dominates and laser pulses have a 1.01 THz repetition rate, determined by the equal frequency difference of the three FBGs. We are thus able to decouple the repetition rate of a mode-locked laser from the cavity length. With much higher bias current, the QD F-P cavity dominates and the repetition rate is switched to 43.8 GHz, defined by the length of the F-Pcavity.Crown

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“…A high lasing power is also favorable for obtaining higher conversion efficiency [7]- [9]. As for the nonlinear gain medium, in contrast to the quantum well (QW) material, quantum dots (QDs) offer various advantages such as a wider gain spectrum [10], ultrafast carrier dynamics [11], higher nonlinear gain effect and thus a larger three-order nonlinear susceptibility [9], [12], [13]. In addition, due to the reduced linewidth enhancement factor (LEF), QDs have the possibility of eliminating destructive interference among the nonlinear processes and also offer an enhanced efficiency in the wavelength up-conversion [14], [15].…”

Section: Introductionmentioning

confidence: 99%

Nondegenerate Four-Wave Mixing in a Dual-Mode Injection-Locked InAs/InP(100) Nanostructure Laser

et al. 2014

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International audienceThe nondegenerate four-wave mixing (NDFWM) characteristics in a quantum-dot Fabry-Perot laser are investigated, employing the dual-mode injection-locking technique. The solitary laser features two lasing peaks, which provides the possibility for efficient FWM generation. Under optical injection, the NDFWM is operated up to a detuning range of 1.7 THz with a low injection ratio of 0.42. The normalized conversion efficiency (NCE) and the side-mode suppression ratio (SMSR) with respect to the converted signal are analyzed. The highest NCE of 17 dB associated with a SMSR of 20.3 dB is achieved at detuning of 110 GHz

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Highly efficient non-degenerate four-wave mixing process in InAs/InGaAsP quantum dots

Cited by 22 publications

References 9 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

THz optical pulses from a coupled-cavity quantum-dot laser

Nondegenerate Four-Wave Mixing in a Dual-Mode Injection-Locked InAs/InP(100) Nanostructure Laser

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