Highly efficient n-type PbTe developed by advanced electronic structure engineering

Wojciechowski, K.; Parashchuk, Taras; Wiendlocha, Bartłomiej; Cherniushok, Oleksandr; Dashevsky, Z.

doi:10.1039/d0tc03067h

Cited by 43 publications

(44 citation statements)

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“…8 The second stage is the high-temperature PbTe, simultaneously doped with In and I donors (n-Pb 0.999 In 0.001 Te 0.999 I 0.001 ), TE. 18 The application of the low-temperature segment is particularly important for the p-type leg due to the low figure of merit of the developed p-Ge 0.96 Bi 0.04 Te in the temperature range of 300-500 K (Figure 11A). With this aim, it is assumed to use for a lowtemperature segment the p-Bi 0.5 Sb 1.5 Te 3 TE material with orientation alternative to the traditional one, where planes of cleavage of legs are parallel to the heat flux direction.…”

Section: Design Of Segmented Thermoelectric Unicouplementioning

confidence: 99%

“…While Bi 2 Te 3 ‐based materials remain the champion in the low‐temperature region, we should mention that among the new materials, Mg 3 Sb 2 n ‐type material has also been showing high efficiency 16,17 . For the mid‐high temperature range, an effective PbTe TE material has been developed recently by indium doping 18,19 . The indium level attunes the Fermi level near the bottom of the conduction band over a wide temperature range.…”

Section: Introductionmentioning

confidence: 99%

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Feasibility of high performance in p‐type Ge₁₋_xBi_xTe materials for thermoelectric modules

et al. 2022

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GeTe is a promising candidate for the fabrication of high-temperature segments for p-type thermoelectric (TE) legs. The main restriction for the widespread use of this material in TE devices is high carrier concentration (up to ∼ 10 21 cm −3 ), which causes the low Seebeck coefficient and high electronic component of thermal conductivity. In this work, the band structure diagram and phase equilibria data have been effectively used to attune the carrier concentration and to obtain the high TE performance. The Ge 1−x Bi x Te (x = 0.04) material prepared by the Spark plasma sintering (SPS) technique demonstrates a high power factor accompanied by moderate thermal conductivity. As a result, a significantly higher dimensionless TE figure of merit ZT = 2.0 has been obtained at ∼ 800 K. Moreover, we are the first to propose that application of the developed Ge 1−x Bi x Te (x = 0.04) material in the TE unicouple should be accompanied by SnTe and CoGe 2 transition layers. Only such a unique solution for the TE unicouple makes it possible to prevent the negative effects of high contact resistance and chemical diffusion between the segments at high temperatures.

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Section: Design Of Segmented Thermoelectric Unicouplementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Feasibility of high performance in p‐type Ge₁₋_xBi_xTe materials for thermoelectric modules

et al. 2022

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“…Values of the lattice thermal conductivityL at 300 K for specimens preparated by SPS at 350 -400 o C ≈ 0.8 W/m K. This value of L for specimens with nanocrystlline structure on ~ 30 % less than L for best Bi0.5Sb1.5TenxTe3 polycrystals prepared by hot extrusion [5]. A significant decrease in the value of κl may be due to the scattering of long wave phonons on the grain boundaries [22,23].…”

Section: Thermoelectric Propertiesmentioning

confidence: 99%

Development of Spark Plasma Syntering (SPS) technology for preparation of nanocrystalline p-type thermoelctrics based on (BiSb)2Te3

Kostyuk

Dzundza

Maksymuk³

et al. 2020

Phys. Chem. Solid St.

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Bismuth antimony telluride is the most commonly used commercial thermoelectric material for power generation and refrigeration over the temperature range of 200–400 K. Improving the performance of these materials is a complected balance of optimizing thermoelectric properties. Decreasing the grain size of Bi0.5Sb1.5Te3 significantly reduces the thermal conductivity due to the scattering phonons on the grain boundaries. In this work, it is shown the advances of spark plasma sintering (SPS) for the preparation of nanocrystalline p-type thermoelectrics based on Bi0.5Sb1.5Te3 at different temperatures (240, 350, 400oC). The complex study of structural and thermoelectric properties of Bi0.5Sb1.5Te3 were presented. The high dimensionless thermoelectric figure of merit ZT ~ 1 or some more over 300–400 K temperature range for nanocrystalline p-type Bi0.5Sb1.5Te3 was obtained.

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“…The efficiency of thermoelectric material is defined by the dimensionless thermoelectric figure of merit ZT = S 2 σT/κ el +κ L , where S is the Seebeck coefficient, σ is the electrical conductivity, T is the temperature, and κ el , κ lat are the electronic and lattice components of the thermal conductivity [7,8]. As the Seebeck coefficient, electrical conductivity, and electronic thermal conductivity are interrelated through the carrier concentration and particularities of the band structure, the development of the highly efficient TE materials requires specific properties (narrow bandgap, multivalley band structure, high mobility, high solubility of dopants, intrinsically low κ lat ) [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Phase Analysis and Thermoelectric Properties of Cu-Rich Tetrahedrite Prepared by Solvothermal Synthesis

et al. 2022

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Because of the large Seebeck coefficient, low thermal conductivity, and earth-abundant nature of components, tetrahedrites are promising thermoelectric materials. DFT calculations reveal that the additional copper atoms in Cu-rich Cu14Sb4S13 tetrahedrite can effectively engineer the chemical potential towards high thermoelectric performance. Here, the Cu-rich tetrahedrite phase was prepared using a novel approach, which is based on the solvothermal method and piperazine serving both as solvent and reagent. As only pure elements were used for the synthesis, the offered method allows us to avoid the typically observed inorganic salt contaminations in products. Prepared in such a way, Cu14Sb4S13 tetrahedrite materials possess a very high Seebeck coefficient (above 400 μVK−1) and low thermal conductivity (below 0.3 Wm−1K−1), yielding to an excellent dimensionless thermoelectric figure of merit ZT ≈ 0.65 at 723 K. The further enhancement of the thermoelectric performance is expected after attuning the carrier concentration to the optimal value for achieving the highest possible power factor in this system.

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Highly efficient n-type PbTe developed by advanced electronic structure engineering

Abstract: Lead telluride is one of the most attractive state-of-the-art thermoelectric (TE) materials. Therefore, any improvement of its average thermoelectric figure of merit (ZT)av over a broad temperature range is a...

Cited by 43 publications

References 56 publications

Feasibility of high performance in p‐type Ge₁₋_xBi_xTe materials for thermoelectric modules

Feasibility of high performance in p‐type Ge₁₋_xBi_xTe materials for thermoelectric modules

Development of Spark Plasma Syntering (SPS) technology for preparation of nanocrystalline p-type thermoelctrics based on (BiSb)2Te3

Phase Analysis and Thermoelectric Properties of Cu-Rich Tetrahedrite Prepared by Solvothermal Synthesis

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Highly efficient n-type PbTe developed by advanced electronic structure engineering

Abstract: Lead telluride is one of the most attractive state-of-the-art thermoelectric (TE) materials. Therefore, any improvement of its average thermoelectric figure of merit (ZT)av over a broad temperature range is a...

Cited by 43 publications

References 56 publications

Feasibility of high performance in p‐type Ge1−xBixTe materials for thermoelectric modules

Feasibility of high performance in p‐type Ge1−xBixTe materials for thermoelectric modules

Development of Spark Plasma Syntering (SPS) technology for preparation of nanocrystalline p-type thermoelctrics based on (BiSb)2Te3

Phase Analysis and Thermoelectric Properties of Cu-Rich Tetrahedrite Prepared by Solvothermal Synthesis

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Feasibility of high performance in p‐type Ge₁₋_xBi_xTe materials for thermoelectric modules

Feasibility of high performance in p‐type Ge₁₋_xBi_xTe materials for thermoelectric modules