Thermal detectors find a significant niche in the market of modern sensors. Bi2T3 and PbTe semiconductors are effective thermoelectrics and excellent candidates for different applications. In the present work, a technology for fabrication of p-Bi0.5Sb1.5Te3 and n-PbTe films with the high thermoelectric efficiency on thin flexible polyimide substrate has been developed. The preparation of films was performed by flash evaporation method. The high sensitivity of the devices is due to the high Seebeck coefficient of 200 mV/K and reduction of thermal conductivity of thin thermoelectric film from the bulk value. The devices operate in the Johnson-Nyquist noise limit of the thermocouple. The performance enables fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature.
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