Highly durable low CoO mass production version of 2-kHz ArF excimer laser for DUV lithography

Enami, Tatsuo; Wakabayashi, Osamu; Ishii, Ken; Terashima, Katsutomo; Itakura, Yasuo; Watanabe, Takayuki; Ohta, Takao; Ohbu, Ayako; Kubo, Hirokazu; Tanaka, Hirokazu; Suzuki, Toru; Sumitani, Akira; Mizoguchi, Hideaki

doi:10.1117/12.388981

Cited by 4 publications

(1 citation statement)

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“…The necessary gas velocity v g is given by equation (1). The electrical discharge causes the depletion of the halogen, the sputtering of the electrode metal, and generates electrified molecules.…”

Section: Improvement Of Gas Velocity Between Electrodesmentioning

confidence: 99%

Extremely high-NA high-throughput-scanner-compatible 4-kHz KrF excimer laser for DUV lithography

Mutoh¹,

Enami²,

Kakizaki³

et al. 2001

SPIE Proceedings

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KrF excimer laser lithography has applications for the less-than-130-nm-design rule by improving the exposure technology, i.e., super-resolution technology. We therefore developed a 4-kHz KrF excimer laser which corresponds to the next generation's high throughput and high number of aperture (NA) scanner requirements, and achieved low cost of operation (CoO) for this light source for mass production uses. We estimated the basic performance requirements of our device, and developed the necessary high repetition rate operation technology that corresponds to a high throughput scanner, and achieved 4-kHz/30-W laser output. We also developed pulse stretching technology for ultra line narrowing, which can accommodate the high NA lens, and achieved more than 30 ns pulse width (Tis). We can thus expect less than 0.45-pm spectral bandwidth (FWHM). Moreover, the relation of the repetition rate operation and main module life was evaluated, and the optimal repetition frequency, which considers CoO, was adopted.

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Section: Improvement Of Gas Velocity Between Electrodesmentioning

confidence: 99%