2020
DOI: 10.1016/j.matdes.2020.108922
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Highly-doped SiC resonator with ultra-large tuning frequency range by Joule heating effect

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Cited by 13 publications
(11 citation statements)
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“…[66] frequency tuning can also be achieved through a combination of the residual stress resulting from growth of nanofilms and the Joule heating effect. [69] For example, the residual stress between SiC nanofilm and Si substrate can cause buckling in the out-of-plane direction, [70] with increasing thickness reducing the impact of buckling. Residual stress in SiC/Si nano thin films has been demonstrated to increase the resonant frequency and quality factor.…”
Section: Frequency Tuning In Mmr Sensorsmentioning
confidence: 99%
“…[66] frequency tuning can also be achieved through a combination of the residual stress resulting from growth of nanofilms and the Joule heating effect. [69] For example, the residual stress between SiC nanofilm and Si substrate can cause buckling in the out-of-plane direction, [70] with increasing thickness reducing the impact of buckling. Residual stress in SiC/Si nano thin films has been demonstrated to increase the resonant frequency and quality factor.…”
Section: Frequency Tuning In Mmr Sensorsmentioning
confidence: 99%
“…At the same time, a double clamped cantilever beam, which can be used with DC bias tuning the resonance frequency as shown in Figure 5 b,c [ 47 ]. In order to solve the problem of thermal expansion coefficient mismatch, Guzman et al proposed to use SiC as an independent resonance and heating element to achieve frequency tuning [ 57 ]. For cantilever beams with strong magnetic and electrical coupling, the piezoelectric voltage caused by the strain enhances multiferroic signal transduction.…”
Section: Research On Resonance Performancementioning
confidence: 99%
“…In a review article published in 2016, Wood et al summarized the literature on 3C-SiC resonators concluding that they are good alternatives to Si for developing MEMS-based oscillators [141]. Recent publications on 3C-SiC MEMS resonators report the fabrication and testing of monocrystalline 3C-SiC on SOI electrostatic MEMS resonators [142] and a highly doped 3C-SiC bridge resonator [143]. The piezoresistive pressure sensors are, another type of MEMS sensor, commonly developed using CVD SiC films.…”
Section: Sic Memsmentioning
confidence: 99%