Highly Conformal Amorphous W–Si–N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization

Hong, Tae Eun; Jung, Jaehun; Yeo, Seungmin; Cheon, Taehoon; Bae, So Ik; Kim, Soohyun; Yeo, So Jeong; Kim, Hyo‐Suk; Chung, Taek‐Mo; Park, Bo Keun; Kim, Chang Gyoun; Lee, Do-Joong

doi:10.1021/jp510226g

Cited by 17 publications

(19 citation statements)

References 38 publications

(80 reference statements)

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“…Regarding the use of these alternative approaches, Si-containing compounds are of particular note as SiO 2 itself is often difficult to grow on its own. 34,40,44,48,106,173,174 A number of studies have successfully deposited Si-containing materials by ALD by using precursor strategies other than supercycles. These strategies include co-dosing multiple precursors simultaneously (Figure 3b), 34 combining Si with another element in a multiconstituent precursor (Figure 3c), 44,48,150,167,168 or using an alkoxide-containing precursor with no separate co-reactant (Figure 3d).…”

Section: Overview Of Ternary and Quaternary Aldmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality on 3-D nanostructured substrates and control of the film thickness at the atomic level. The current applications of ALD primarily involve binary metal oxides, but for new applications there is increasing interest in more complex materials such as doped, ternary, and quaternary materials. This article reviews how these multicomponent materials can be synthesized by ALD, gives an overview of the materials that have been reported in the literature to date, and discusses important challenges. The most commonly employed approach to synthesize these materials is to combine binary ALD cycles in a supercycle, which provides the ability to control the composition of the material by choosing the cycle ratio. Discussion will focus on four main topics: (i) the characteristics, benefits, and drawbacks of the approaches that currently exist for the synthesis of multicomponent materials, with special attention to the supercycle approach; (ii) the trends in precursor choice, process conditions, and characterization methods, as well as underlying motivations for these design decisions; (iii) the distribution of atoms in the deposited material and the formation of specific (crystalline) phases, which is shown to be dependent on the ALD cycle sequence, deposition temperature, and post-deposition anneal conditions; and (iv) the nucleation effects that occur when switching from one binary ALD process to another, with different explanations provided for why the growth characteristics often deviate from what is expected. This paper provides insight into how the deposition conditions (cycle sequence, temperature, etc.) affect the properties of the resultant thin films, which can serve as a guideline for designing new ALD processes. Furthermore, with an extensive discussion on the nucleation effects taking place during the growth of ternary materials, we hope to contribute to a better understanding of the underlying mechanisms of the ALD growth of multicomponent materials.

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Section: Overview Of Ternary and Quaternary Aldmentioning

confidence: 99%

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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“…LiN (SiMe 3 ) 2 was synthesized according to Ref. []. FeCl 2 , n ‐butyllithium, hexamethyldisilazane and diisopropylcarbodiimide were purchased from Energy Chemical and used without further manipulation.…”

Section: Methodsmentioning

confidence: 99%

An iron (II) guanidinate compound: Synthesis, characterization, thermal properties and its application as a CVD precursor for iron oxide film

Zhang

Liu

et al. 2019

Applied Organom Chemis

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An iron compound containing guanidinate ligand [Fe((SiMe 3 ) 2 NC( i PrN) 2 ) 2 ] was synthesized using a conventional lithium-salt-elimination reaction, and its chemical structure was characterized through elemental analysis, 1 H-NMR and single-crystal X-ray diffraction, respectively. The thermal properties of the compound were examined through thermogravimetric analysis (TGA), and the TGA results demonstrated that the compound possessed sufficient volatility and suitable thermal stability for the CVD process. Moreover, the deposition experiments were conducted using the synthesized compound as a precursor and O 2 as an oxygen source to confirm its applicability as a CVD precursor, and α-Fe 2 O 3 films were successfully deposited at a relatively low deposition temperature (300°C).

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“…It should be mentioned that the latter binding energy (102.8 eV) of Si-2p may be due to the minute surface oxidation induced by the X-ray radiation or air atmosphere as its intensity is very low. Interestingly, it was reported that the Si-2p binding energy in SiC, Si 3 N 4 , and SiO 2 was about 100.4 eV [30,31], 101.8 eV [32,33], 102.9 eV [33,34], respectively. The Si-2p binding energy in three compounds exactly correlates with the electronegativity of C, N, and O atoms (Pauling's electronegativity C = 2.55, N = 3.04, O = 3.44) [10].…”

Section: X-ray Photoelectron Spectroscopy: the Evidence Of N 3− Substmentioning

confidence: 99%

Highly Luminous Ba2SiO4−δN2/3δ:Eu2+ Phosphor for NUV-LEDs: Origin of PL-Enhancement by N3−-Substitution

Kim

Hong

et al. 2020

Materials

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Ba 2 SiO 4−δ N 2/3δ :Eu 2+ (BSON:Eu 2+ ) materials with different N 3− contents were successfully prepared and characterized. Rietveld refinements showed that N 3− ions were partially substituted for the O 2− ions in the SiO 4 -tetrahedra because the bond lengths of Si-(O,N) (average value = 1.689 Å) were slightly elongated compared with those of Si-O (average value = 1.659 Å), which resulted in the minute compression of the Ba(2)-O bond lengths from 2.832 to 2.810 Å. The average N 3− contents of BSON:Eu 2+ phosphors were determined from 100 nm to 2000 nm depth of grain using a secondary ion mass spectrometry (SIMS): 0.064 (synthesized using 100% α-Si 3 N 4 ), 0.035 (using 50% α-Si 3 N 4 and 50% SiO 2 ), and 0.000 (using 100% SiO 2 ). Infrared (IR) and X-ray photoelectron spectroscopy (XPS) measurements corroborated the Rietveld refinements: the new IR mode at 850 cm −1 (Si-N stretching vibration) and the binding energy at 98.6 eV (Si-2p) due to the N 3substitution. Furthermore, in UV-region, the absorbance of N 3− -substituted BSON:Eu 2+ (synthesized using 100% α-Si 3 N 4 ) phosphor was about two times higher than that of BSO:Eu 2+ (using 100% SiO 2 ). Owing to the N 3− substitution, surprisingly, the photoluminescence (PL) and LED-PL intensity of BSON:Eu 2+ (synthesized using 100% α-Si 3 N 4 ) was about 5.0 times as high as that of BSO:Eu 2+ (using 100% SiO 2 ). The compressive strain estimated by the Williamson−Hall (W−H) method, was slightly increased with the higher N 3− content in the host-lattice of Ba 2 SiO 4, which warranted that the N 3ion plays an important role in the highly enhanced PL intensity of BSON:Eu 2+ phosphor. These phosphor materials could be a bridgehead for developing new phosphors and application in white NUV-LEDs field.

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Highly Conformal Amorphous W–Si–N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization

Cited by 17 publications

References 38 publications

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

An iron (II) guanidinate compound: Synthesis, characterization, thermal properties and its application as a CVD precursor for iron oxide film

Highly Luminous Ba2SiO4−δN2/3δ:Eu2+ Phosphor for NUV-LEDs: Origin of PL-Enhancement by N3−-Substitution

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