Highly Conductive In4Sn3O12 Films Prepared by Pulsed Laser Deposition

Abstract

Highly conductive (> 10 3 Ω -1 cm -1 ) and transparent (~ 90%) In 4 Sn 3 O 12 films have been deposited using pulsed laser deposition (PLD) on glass substrates held at a temperature of 500ºC under varying pressures of oxygen (2.5 mTorr ≤ P O2 ≤ 15 mTorr). The crystallinity and the roughness of the films were found to increase with the pressure of oxygen used during deposition. Electron concentrations of the order of 5x10 20 cm -3 and mobilities as high as 30 cm 2 V -1 s -1 were derived from the measurement of Hall coefficients. Both the electronic transport and optical properties of the films were found to be strongly sensitive to the pressure of oxygen used during deposition.

Transparent Conducting Oxides in the ZnO-In2O3-SnO2 System

“…64,65 In 4 Sn 3 O 12 , however, has been grown as a thin film and conductivities greater than 1000 S/cm have been reported. 66,67 Although this phase will not be discussed with respect to ZITO films, it is another alternative for low-indium TCOs.…”

“…The ZnO-In 2 O 3 -SnO 2 subsolidus phase diagram does not show the known binary phase In 4 Sn 3 O 12 . The ZITO phase diagram was constructed at 1275 °C while In 4 Sn 3 O 12 does not form until 1345 °C. , In 4 Sn 3 O 12 , however, has been grown as a thin film and conductivities greater than 1000 S/cm have been reported. , Although this phase will not be discussed with respect to ZITO films, it is another alternative for low-indium TCOs.…”