Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; Kim, Yonghun; Park, Min Ji; Yoon, Sung Min; Youn, Hyoc Min; Lee, Heon; Lee, Byoung Hun; Jung, Gun Young

doi:10.1038/srep37764

Cited by 36 publications

(27 citation statements)

References 40 publications

(57 reference statements)

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“…Kim and Münzenrieder et al reported that the threshold voltage in Figure 14b and the TFT mobility in Figure 14c shifted to opposite directions under compressive and tensile strain [81]. The results of the repeatability tests with four forms are shown in Figure 13a-d [160]. In Figure 13a, b the TFTs were bent along the channel width at a bending radius of 3 mm and 1.5 mm, respectively.…”

Section: Degradation Of Tfts Under Mechanical Stressmentioning

confidence: 91%

“…In this section, the bending behaviors of strained TFTs are discussed. Figure 12 shows two kinds of bending behaviors of IGZO TFTs [160]. In Figure 12a, the TFT was bent along with the channel width, while the TFT in Figure 12b was bent along with the channel length.…”

Section: Degradation Of Tfts Under Mechanical Stressmentioning

confidence: 99%

“…In general, the TFTs bent along the channel width show better performance than those bent along the channel length. The results of the repeatability tests with four forms are shown in Figure 13a-d [160]. In Figure 13a, b the TFTs were bent along the channel width at a bending radius of 3 mm and 1.5 mm, respectively.…”

Section: Degradation Of Tfts Under Mechanical Stressmentioning

confidence: 99%

“…illustrates a type of IGZO-TFT with high reliability under bending tests. This device employed a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers[160]. The fabricated TFTs exhibited a good performance with a mobility of 15.67 cm 2 V −1 s −1 , a threshold voltage of 6.4 V and an on/off ratio of 4.5 × 10 5 .…”

mentioning

confidence: 99%

“…Transfer curve of IGZO TFT under bending stress (top right corner). Chemical structure of SA7[160] (dotted box).…”

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confidence: 99%

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Research Progress on Flexible Oxide-Based Thin Film Transistors

Zhang

Xiao

et al. 2019

Applied Sciences

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Oxide semiconductors have drawn much attention in recent years due to their outstanding electrical performance, such as relatively high carrier mobility, good uniformity, low process temperature, optical transparency, low cost and especially flexibility. Flexible oxide-based thin film transistors (TFTs) are one of the hottest research topics for next-generation displays, radiofrequency identification (RFID) tags, sensors, and integrated circuits in the wearable field. The carrier transport mechanism of oxide semiconductor materials and typical device configurations of TFTs are firstly described in this invited review. Then, we describe the research progress on flexible oxide-based TFTs, including representative TFTs fabricated on different kinds of flexible substrates, the mechanical stress effect on TFTs and optimized methods to reduce this effect. Finally, an outlook for the future development of oxide-based TFTs is given.

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Section: Degradation Of Tfts Under Mechanical Stressmentioning

confidence: 91%

Section: Degradation Of Tfts Under Mechanical Stressmentioning

confidence: 99%

Section: Degradation Of Tfts Under Mechanical Stressmentioning

confidence: 99%

mentioning

confidence: 99%

“…Transfer curve of IGZO TFT under bending stress (top right corner). Chemical structure of SA7[160] (dotted box).…”

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confidence: 99%

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Research Progress on Flexible Oxide-Based Thin Film Transistors

Zhang

Xiao

et al. 2019

Applied Sciences

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Mechanically Robust and Highly Flexible Nonvolatile Charge‐Trap Memory Transistors Using Conducting‐Polymer Electrodes and Oxide Semiconductors on Ultrathin Polyimide Film Substrates

Yang

Kim

Yoon

et al. 2019

Adv Materials Technologies

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Flexible charge‐trap memory thin‐film transistors (CTM‐TFTs) are fabricated and characterized for next‐generation highly functional consumer electronics. Poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and 1.2‐µm‐thick polyimide (PI) films are introduced as source/drain electrodes and plastic substrates, respectively, to realize highly flexible CTM‐TFTs with conducting polymers. A uniquely structured sacrificial layer is suggested for the lithography‐compatible transfer and patterning processes of PEDOT:PSS on inorganic Al2O3 barrier layers are prepared on the PI substrates. The CTM‐TFTs show significantly improved device performance compared with those of the previous proto‐type devices, including a memory window (MW) of 16.8 V and program speed of 100 µs at a program pulse amplitude of ±20 V. Furthermore, the MWs and on/off current ratio do not shown remarkable degradation, and total variations within a range of less than 7.5% are observed even under harsh bending strains with a curvature radius of 1 mm. Additionally, the mechanical robustness of the fabricated CTM‐TFTs is quantitatively discussed based on the contributions of the conducting polymer electrode and the ultrathin PI film to further improve device performance of the flexible CTM‐TFTs.

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Extremely Flexible Indium‐Gallium‐Zinc Oxide (IGZO) Based Electronic Devices Placed on an Ultrathin Poly(Methyl Methacrylate) (PMMA) Substrate

Kumaresan

Lee

Lim

et al. 2018

Adv Elect Materials

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deformation is highly recommended for wearable electronics placed on any textile products and/or hand gloves. [20,21] In general, the substrate having the electronic devices plays an important role in their flexibility. To date, polyimide (PI) has been widely utilized as a flexible substrate due to its excellent dielectric property, and good chemical and thermal stability. [22][23][24][25][26][27] However, commercially available PI is not transparent, which limits its use in display applications, and conformal contact of PI substrate onto nonplanar surfaces such as gloves, flexible poly(vinyl chloride) (PVC) tubes, or cotton by using a glue is impractical.To attain both high flexibility and conformal contact of electronic devices, researchers have designed free-standing organic devices, in which a polymer dielectric layer (e.g., polystyrene, polyacrylonitrile, polylactide) or organic active layer (e.g., pentacene) itself acts as a substrate. [28][29][30][31] Zhang et al. fabricated freestanding pentacene field effect transistors (FETs) by utilizing a polyacrylonitrile dielectric layer to hold the device components and attached it onto rough or even sharp substrates. [32] However, as semiconducting polymers are not stable under atmospheric conditions, [33,34] metal oxide-based electronic devices [35][36][37] using thin inorganic semiconductor layers, such as SnO 2 , ZnO, In-Ga-ZnO, MoO 3 , and TiO 2 , are utilized; however, the thin metal oxide layers cannot endure physical strain greater than 1%, while being bent and twisted. [38] In fact, the physical strain (S) acting on the thin metal oxide layer while being bent can be controlled by substrate thickness, which is determined by a simple formula S = d/2r ("d" is the substrate thickness, and "r" is the bending radius).Therefore, metal oxide-based electronic devices placed on top of an ultrathin organic substrate have been pursued to have less physical strain for ultraflexibility. [39][40][41][42][43] Han et al. engineered a foldable indium tin oxide (ITO)-coated glass platform composed of thick and nondeformable parts surrounded by thin and foldable glass, which was selectively etched down to 5 µm, and successfully obtained a foldable substrate without any device failure. [39] Hassan et al. utilized a thin Al 2 O 3 substrate to fabricate flexible metal oxide-based H 2 sensors. [40] Kim et al. fabricated In-Ga-ZnO TFTs on a 1.5 µm thick polyimide substrate and demonstrated its bendability at a bending radius down to 0.25 mm. [41] The flexibility of metal oxide-based electronic devices is severely limited by the thickness of their substrate. To enhance the flexibility of semiconducting metal oxide-based electronic devices, a new and simple way to fabricate indium-gallium-zinc oxide (IGZO)-based electronic devices on an ultrathin (1.9 µm) poly(methyl methacrylate) (PMMA) substrate is introduced. The PMMA layer spin-coated on an unmodified glass slide has no chemical interactions at the interface, resulting in weak adhesion. Therefore, the PMMA layer with the devices...

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Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

Cited by 36 publications

References 40 publications

Research Progress on Flexible Oxide-Based Thin Film Transistors

Research Progress on Flexible Oxide-Based Thin Film Transistors

Mechanically Robust and Highly Flexible Nonvolatile Charge‐Trap Memory Transistors Using Conducting‐Polymer Electrodes and Oxide Semiconductors on Ultrathin Polyimide Film Substrates

Extremely Flexible Indium‐Gallium‐Zinc Oxide (IGZO) Based Electronic Devices Placed on an Ultrathin Poly(Methyl Methacrylate) (PMMA) Substrate

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