Highly anisotropic silicon reactive ion etching for nanofabrication using mixtures of SF6/CHF3 gases

Grigoropoulos, S.; Gogolides, Εvangelos; Tserepi, Angeliki; Nassiopoulos, A. G.

doi:10.1116/1.589306

Cited by 32 publications

(11 citation statements)

References 24 publications

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“…The Cr grating pattern is transferred into the Si substrate by a two-step etch process that relies on the formation of polymer-based sidewall passivation to achieve an anisotropic etch. 19 The first etch step uses CHF 3 and SF 6 ͑35and 5-SCCM gas flow rates͒ and the second uses just CF 4 ͑40 SCCM͒. In both cases the rf power is 125 W and the chamber pressure is 10 mTorr.…”

Section: B Fabricationmentioning

confidence: 99%

Stacked subwavelength gratings as circular polarization filters

Deguzman

Nordin

2001

Appl. Opt.

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We have stacked subwavelength gratings (SWGs) on a single substrate to create a compact, integrated circular polarization filter. The SWGs consist of a wire grid polarizer and a broadband form-birefringent quarter-wave plate (QWP). Rigorous coupled-wave analysis was used to design the QWP for operation over the 3.5-5.0-mum wavelength range. The fabricated silicon broadband QWP exhibited a phase retardance of 82-97 degrees across this wavelength range. Two stacked structures are presented, each with a different wire grid polarizer fabricated on an organic planarization layer (SU-8) that is deposited on a QWP grating. Transmittance measurements of the first structure when illuminated with nominally right- and left-circularly polarized light indicate a circular extinction ratio (CER) limited by the low linear extinction ratio of the polarizer. Use of a wire grid polarizer with a higher extinct ratio led to a stacked SWG structure that demonstrated CERs of 10-45 across the 3.5-5.0-mum wavelength range.

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Section: B Fabricationmentioning

confidence: 99%

Stacked subwavelength gratings as circular polarization filters

Deguzman

Nordin

2001

Appl. Opt.

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“…Different methods have been developed for the fabrication of SiNWs either by Si etching [12,21,22] or by Si nanowire synthesis [1,23]. Among them, the technique of metal-assisted chemical etching [MACE] [24-29] has gained an increasing interest in the last years due to its simplicity and the high crystalline quality of the obtained SiNWs, resulting from etching of the single crystalline Si material.…”

Section: Introductionmentioning

confidence: 99%

Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics

2011

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In this paper, we investigate the formation kinetics of Si nanowires [SiNWs] on lithographically defined areas using a single-step metal-assisted chemical etching process in an aqueous HF/AgNO3 solution. We show that the etch rate of Si, and consequently, the SiNW length, is much higher on the lithographically defined areas compared with that on the non-patterned areas. A comparative study of the etch rate in the two cases under the same experimental conditions showed that this effect is much more pronounced at the beginning of the etching process. Moreover, it was found that in both cases, the nanowire formation rate is linear with temperature in the range from 20°C to 50°C, with almost the same activation energy, as obtained from an Arrhenius plot (0.37 eV in the case of non-patterned areas, while 0.38 eV in the case of lithographically patterned areas). The higher etch rate on lithographically defined areas is mainly attributed to Si surface modification during the photolithographic process.PACS: 68; 68.65-k.

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“…Moreover, etching parameters were selected such as to provide both anisotropic as well as isotropic etching of PS, by choosing conditions similar to those applied to c-Si etching. In specific, etching in pure SF 6 that provides nearly isotropic etching of c-Si [6], as well as etching in fluorocarbon-containing plasmas (SF 6 /C 4 F 8 , SF 6 /CHF 3 ) [7,8] that ensure anisotropic etching of c-Si are examined. The gas composition SF 6 /C 4 F 8 was used in the pulsed mode (like in a Bosch process [7]), with each gas being introduced in the reactor in cycles of 7 sec/3 sec duration for SF 6 and C 4 F 8 , correspondingly.…”

Section: Methodsmentioning

confidence: 99%

Dry etching of porous silicon in high density plasmas

Tserepi¹,

Tsamis

Gogolides

et al. 2003

phys. stat. sol. (a)

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Dry etching processes routinely used for plasma etching of crystalline Si (c-Si) are evaluated as potential means for removal of porous Si (PS). Etching rates for PS and the selectivity with respect to c-Si are determined for a variety of plasma conditions and material parameters. We find that PS etching rates depend on the plasma conditions, and more importantly on PS material properties such as porosity and degree of oxidization. In addition, the selectivity varies from high to very low values, depending on the porosity and the thermal treatment of PS. The developed dry etching processes are compatible with the fabrication of devices where PS is used both as a sacrificial layer and as a patternable active material.

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Highly anisotropic silicon reactive ion etching for nanofabrication using mixtures of SF6/CHF3 gases

Cited by 32 publications

References 24 publications

Stacked subwavelength gratings as circular polarization filters

Stacked subwavelength gratings as circular polarization filters

Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics

Dry etching of porous silicon in high density plasmas

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