Highly Accelerated Life Testing (HALT) for Multilayer Ceramic Capacitor Qualification

Munikoti, R.; Dhar, P.

doi:10.1109/tchmt.1988.1134944

Cited by 5 publications

(3 citation statements)

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“…The lifetime of the HALT can reach above 1000 hours under this stricter condition. An empirical formula has been used in industry to rapidly access the reliability of the MLCC chips:

\frac{t_{1}}{t_{2}} = {()(, \frac{V_{2}}{V_{1}})}^{n} \cdot exp [\frac{E_{a}}{k} ()(\frac{1}{T_{1}} - \frac{1}{T_{2}})]

Where t 1 is the mean time to failure (MTTF) at a voltage V 1 and temperature T 1 ; t 2 is the MTTF at a different voltage V 2 and temperature T 2 ; n is the voltage acceleration exponent, E a is a pseudo‐activation energy, and k is the Boltzmann constant (8.6 × 10 −5 eV/K). In industry, an average of 3 is generally accepted for the voltage acceleration exponent n .…”

Section: Resultsmentioning

confidence: 99%

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Effect of MnO₂on the dielectric properties of Nb‐doped BaTiO₃‐(Bi_0.5Na_0.5)TiO₃ceramics for X9RMLCCapplications

et al. 2018

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MnO 2 and Nb 2 O 5 co-doped 0.9BaTiO 3 -0.1(Bi 0.5 Na 0.5 )TiO 3 powders with excellent dielectric properties were fabricated using a conventional solid-state reaction method and sand milling. The doping effects of various amounts of MnO 2 on the dielectric properties were investigated. The results revealed that the dielectric properties greatly depended on the concentration of MnO 2 . All the ceramics met the X9R specification. The dielectric loss decreased with an increasing concentration of MnO 2 . The specimen with an appropriate amount of 0.2 mol% MnO 2 exhibited the most enhanced properties: high insulation resistance (2.49 × 10 13 Ω/ cm) and improved degradation properties. Multilayer ceramic capacitor (MLCC) chips were prepared by tape casting using a 0.2 mol% Mn-doped 9010BTBNTbased ceramic powder. The capacitance of the MLCC chip was approximately 100 nF, and the dielectric loss was approximately 1.75% at room temperature.The high-temperature accelerated lifetime was over 1000 hours under 250 V (five times the working voltage) and at 230°C, indicating that the MLCC chips possess superior reliability. K E Y W O R D Score-shell structure, dielectric properties, high-temperature accelerated lifetime test, multilayer ceramic capacitor, tape casting, X9R

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“…The lifetime of the HALT can reach above 1000 hours under this stricter condition. An empirical formula has been used in industry to rapidly access the reliability of the MLCC chips:

\frac{t_{1}}{t_{2}} = {()(, \frac{V_{2}}{V_{1}})}^{n} \cdot exp [\frac{E_{a}}{k} ()(\frac{1}{T_{1}} - \frac{1}{T_{2}})]

Section: Resultsmentioning

confidence: 99%

“…The precise physical meaning of pseudo‐activation energy is uncertain for ceramics due to the complicated nature of the degrading mechanisms. However, a value of 1 eV is generally assumed by many researchers . Here, subscripts 1 and 2 refer to the HALT and normal working conditions of the MLCC chips.…”

Section: Resultsmentioning

confidence: 99%

Effect of MnO₂on the dielectric properties of Nb‐doped BaTiO₃‐(Bi_0.5Na_0.5)TiO₃ceramics for X9RMLCCapplications

et al. 2018

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“…3 are analyzed by ln (TTF) vs 1/ T (Fig. 4) using an empirical equation developed for the reliability of MLCC as follows 16–18 : where V is the applied voltage, N is the voltage acceleration factor, E a is the apparent activation energy, R is the ideal gas constant, and T is the temperature. Linear relations are observed in Fig.…”

Section: Discussionmentioning

confidence: 99%

Failure Mechanism of a Low‐Temperature‐Cofired Ceramic Capacitor with an Inner Ag Electrode

Shih

Jean

Lin³

2010

Journal of the American Ceramic Society

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Failure mechanism of a multilayer ceramic capacitor (MLCC) made of a low‐fire BaNd2Ti4O12(BNT)+ZnO–B2O3 (ZB) dielectric with an inner pure silver electrode at elevated temperatures and voltages has been investigated. A nonlinear current–voltage leakage characteristic is found when the degradation of MLCC occurs, and the time to failure decreases with increasing either the temperature or the voltage. Results of microstructure, composition, and impedance analyses reveal that the failure is caused by silver diffusion in the ZB glass during sintering and highly accelerated life test.

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Perovskite Thin Films for High-Frequency Capacitor Applications

Dimos

Mueller

1998

Annu. Rev. Mater. Sci.

156

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▪ Abstract Perovskite, ferroelectric and paraelectric, thin films exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). This feature makes films such as (Ba,Sr)TiO3 and Pb(Zr,Ti)O3 ideally suited for a wide range of capacitor applications, particularly decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless communications. The successful implementation of these materials as high-frequency dielectrics requires a detailed understanding of both their processing and materials properties.

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Highly Accelerated Life Testing (HALT) for Multilayer Ceramic Capacitor Qualification

Cited by 5 publications

References 0 publications

Effect of MnO₂on the dielectric properties of Nb‐doped BaTiO₃‐(Bi_0.5Na_0.5)TiO₃ceramics for X9RMLCCapplications

Effect of MnO₂on the dielectric properties of Nb‐doped BaTiO₃‐(Bi_0.5Na_0.5)TiO₃ceramics for X9RMLCCapplications

Failure Mechanism of a Low‐Temperature‐Cofired Ceramic Capacitor with an Inner Ag Electrode

Perovskite Thin Films for High-Frequency Capacitor Applications

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Highly Accelerated Life Testing (HALT) for Multilayer Ceramic Capacitor Qualification

Cited by 5 publications

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Effect of MnO2on the dielectric properties of Nb‐doped BaTiO3‐(Bi0.5Na0.5)TiO3ceramics for X9RMLCCapplications

Effect of MnO2on the dielectric properties of Nb‐doped BaTiO3‐(Bi0.5Na0.5)TiO3ceramics for X9RMLCCapplications

Failure Mechanism of a Low‐Temperature‐Cofired Ceramic Capacitor with an Inner Ag Electrode

Perovskite Thin Films for High-Frequency Capacitor Applications

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Effect of MnO₂on the dielectric properties of Nb‐doped BaTiO₃‐(Bi_0.5Na_0.5)TiO₃ceramics for X9RMLCCapplications

Effect of MnO₂on the dielectric properties of Nb‐doped BaTiO₃‐(Bi_0.5Na_0.5)TiO₃ceramics for X9RMLCCapplications