Lead-free dielectric capacitors are excellent candidates for pulsed
power devices. However, their low breakdown strength (E
b) strongly limits their energy-storage performance. In
this study, Sr0.7Bi0.2TiO3 (SBT)
and Bi(Mg0.5Hf0.5)O3 (BMH) were introduced
into BaTiO3 (BT) ceramics to suppress interfacial polarization
and modulate the microstructure. The results show that the introduction
of SBT and BMH increases the band gap width, reduces the domain size,
and, most importantly, successfully attenuates the interfacial polarization.
Significantly enhanced E
b values were
obtained in (1 – x)(0.65BaTiO3–0.35Sr0.7Bi0.2TiO3)–xBi(Mg0.5Hf0.5)O3 (BSBT–xBMH) ceramics. Meanwhile, the interfacial polarization
was reduced to near zero in the sample with x = 0.10,
achieving an ultrahigh E
b (64 kV/mm) and
a very large recoverable energy-storage density (W
rec ≈ 9.13 J/cm3). In addition, the
sample has excellent thermal stability (in line with EIA-X7R standards)
and frequency stability. These properties indicate that the BSBT–0.10BMH
ceramic holds promising potential for the application of pulsed power
devices.