Highlights in Semiconductor Device Development

Carbon-based materials (CM) growth techniques include common growth factors for meta-photonics-heterostructure, holographic displays, and lasers. In this article, a review of basic growth using several sources is presented. The solid and gas sources of CVD and PLD techniques are discussed. Additionally, doping types and the fabrication of the CM devices are covered to satisfy the requirements of the light emitters’ functionality in the physics of materials as follows: (a) direct bandgap, (b) UV range of 0.1 μm < λG < 0.4 μm, 12.40 eV < EG > 3.10 eV, and (c) p-n junction formation. Additionally, conversion of injected electrical current into light in the semiconductor materials using the anti-electrons process for creating light emitters is proposed. Therefore, this review study explores the potential of the selected CM sources as an inexpensive and abundantly available renewable natural source for highly crystalline nanolayers. The CM status of epitaxial thin-film growth is introduced as well as device-processing technologies for prediction. Finally, the positron process in direct light conversion is discussed.

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Highlights in Semiconductor Device Development

Abstract: August 4, 1981Following a brief description of early semiconductor history, the invention of the transitor and subsequent important events are presented in perspective, with emphasis on the role of semiconductor physics in device development.

Cited by 2 publications

References 16 publications

Brief history of semiconductor science and technology and India’s role in the decade after the invention of transistor

Brief history of semiconductor science and technology and India’s role in the decade after the invention of transistor

Ultrawide-bandgap semiconductor of carbon-based materials for meta-photonics-heterostructure, lasers, and holographic displays

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