Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm

Zhang, Pengzhan; Chen, Kunji; Dong, Hengping; Pei, Zingway; Fang, Zhong-Hui; Li, Wei; Xu, Jun; Huang, Xinfan

doi:10.1063/1.4887058

Cited by 22 publications

(27 citation statements)

References 29 publications

(14 reference statements)

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“…They believed that the PL arose either from radiative recombination between localized bandtail states associated with Si-N bonds similar to a-SiN x films or from both band-tail states and luminescent defect states, which consist of silicon sub-oxide bonding defects. However, in our previous works [44,46,49], the a-SiN x O y films were prepared by PECVD with NH 3 :SiH 4 :N 2 reaction gases, and then subsequently oxidized in situ by oxygen plasma [53]. As the O/(O+N) ratio is able to be controlled in the range of 0.05-0.15, and these a-SiN x O y films can be called as N-type a-SiN x O y films.…”

Section: Role Of Oxygen Bonding and N-si-o Bonding Defectsmentioning

confidence: 99%

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

et al. 2019

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Silicon oxynitride films are one kind of important gate dielectric materials for applications in the fabrication of silicon CMOS integrated circuits (ICs), which have been widely and deeply studied. However, with the significant demand of the technologies for Si-based monolithic optoelectronic ICs, the research efforts on the optoelectronic applications of these materials have been continually increasing, particularly in the study of light emission properties and recombination mechanisms. In this paper, we first briefly outline the present photoluminescence (PL) mechanisms in amorphous silicon oxynitride (a-SiO x N y) films. Since, the PL properties and recombination processes are affected by both structural disorder and chemical disorder, the PL mechanism has been still unclear and even controversial until now. Among these various PL recombination models, the band tail states and defect state models have gained general consensus. Recently, a N-Si-O bond defect model has been reported, which depends on relative atom concentration of oxygen and nitrogen in the silicon oxynitride materials. It has been revealed that oxygen bonding plays a key role, not only in reducing the structural disorder, but also in creating N-Si-O (N x) defect states in the band gap. The characteristics of two models, namely band tail and N-Si-O bond defects, have been discussed in detail. Finally, it has been shown that by controlling the chemical composition of these non-stoichiometric silicon oxynitride materials, the optical and electronic properties can be improved. Keywords: amorphous silicon oxynitride (a-SiN x O y), PL mechanism, band tail model, N-Si-O bond defect model, a-SiN x O y LED

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Section: Role Of Oxygen Bonding and N-si-o Bonding Defectsmentioning

confidence: 99%

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

et al. 2019

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“…Silicon-based light-emitting materials have attracted attention over the past decade for their potential as next-generation Si photonics. Silicon-based materials, including silicon nitride (SiN x ) [1][2][3], silicon oxide (SiO x ) [4][5][6][7][8][9][10], silicon oxynitride (SiN x O y ) [11][12][13][14], and silicon oxycarbide (SiC x O y ) [15][16][17][18], show promise as CMOS-compatible integrated light sources. Thus, significant research efforts have been devoted to understand and optimize their structural and optical properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of thermal annealing on the blue luminescence of amorphous silicon oxycarbide films

Lin

Guo

Song

et al. 2015

Journal of Non-Crystalline Solids

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Amorphous silicon oxycarbide (a-SiC x O y ) films that displayed blue luminescence were fabricated using very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) at a temperature of 250 C. The effects of thermal annealing on the photoluminescence (PL) were investigated. Thermal annealing at 600 °C resulted in a remarkable enhancement in the blue PL, which was clearly observed with the naked eyes in a bright room. The blue PL featured an excitation wavelength independent recombination dynamic on a nanosecond timescale. Neither Si nor SiC quantum dots were present in the annealed films as revealed by transmission electron microscopy. The PL results, combined with an analysis of the chemical bonds present in the films, revealed the origin of the blue PL was largely due to electron-hole pair recombination through Si-related neutral oxygen vacancy defect centers.

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“…13 Last year, the internal quantum efficiency of PL at the peak wavelength of about 470 nm has been achieved as high as 60%. 14 The present research is focused on the effect of oxygen incorporation into Si-N network and the role of N-Si-O bonding configuration in the tunable PL characteristics, thereby to identify the exact radiative recombination mechanism for the PL from our aSiN x :O samples. Through the x-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance (EPR), and photoluminescence excited (PLE) measurements, it is found that the incorporation of oxygen atoms into Si-N network not only reduced the band tail structure disorder (Urbach tail energy, E U ) but also created N-Si-O (N x ) defect states in the band gap.…”

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The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

Zhang

Chen

Lin

et al. 2015

Applied Physics Letters

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Last year, we have reported that the internal quantum efficiency of photoluminescence (PL) from amorphous silicon oxynitride (a-SiNxOy) films has been achieved as high as 60%. The present work intensively investigated the mechanisms for tunable PL in the 2.05–2.95 eV range from our a-SiNx:O films, by using a combination of optical characterizations, X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance (EPR) measurements. The results of XPS, EPR, and photoluminescence excited measurements indicated that the incorporation of oxygen atoms into silicon nitride (a-SiNx) networks not only reduced the band tail structure disorder (Urbach tail width EU) but also created N-Si-O (Nx) defect states in the band gap. We have discovered the distinctive PL characteristics from a-SiNx:O films with various NH3/SiH4 ratios. The PL peak energy (EPL) is independent of the excitation energy (Eexc) and the PL intensity (IPL) is regardless of the optical band gap (Eopt) but is proportional to the Nx defects concentration, both of which are completely different from the PL characteristics by band tail states recombination mechanism, in which the EPL is proportional to Eexc (when Eexc ≤ Eopt) and the IPL is dependent on the relative position of Eexc and Eopt. Based on the N-Si-O bonding configurations and the distinctive PL characteristics, the radiative recombination mechanism through the N-Si-O defect states has been proposed, by which the performance of stimulated emission may be realized in this kind of a-SiNx:O films.

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Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm

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Cited by 22 publications

References 29 publications

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Effect of thermal annealing on the blue luminescence of amorphous silicon oxycarbide films

The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films

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