Effect of thermal annealing on the blue luminescence of amorphous silicon oxycarbide films

Lin, Zhenxu; Guo, Yanqing; Song, Jie; Zhang, Yi; Song, Chao; Wang, Xiang; Huang, Rui

doi:10.1016/j.jnoncrysol.2015.08.022

Cited by 19 publications

(18 citation statements)

References 32 publications

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“…In addition, the SiC x O y matrix can also be used as donor that contributes to the light emission of Eu 2+ ions via energy transfer [22]. So far, defect states, such as C-related oxygen vacancies (C-NOVs), Si-NOVs, and Si-related oxygen deficiency centers, have been proposed to demonstrate the PL mechanism in SiC x O y [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Defect Emission and Optical Gain in SiC_xO_y:H Films

Lin

Huang

et al. 2017

ACS Appl. Mater. Interfaces

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Luminescent SiCO:H films, which are fabricated at different CH flow rates using the plasma-enhanced chemical vapor deposition (PECVD) technique, exhibit strong photoluminescence (PL) with tuning from the near-infrared to orange regions. The PL features an excitation-wavelength-independent recombination dynamics. The silicon dangling bond (DB) defects identified by electron paramagnetic resonance spectra are found to play a key role in the PL behavior. The first-principles calculation shows that the Si DB defects introduce a midgap state in the band gap, which is in good agreement with the PL energy. Moreover, the band gap of a-SiCO:H is found to be mainly determined by Si and C atoms. Thus, the strong light emission is believed to result from the recombination of excited electrons and holes in Si DB defects, while the tunable light emission of the films is attributed to the substitution of stronger Si-C bonds for weak Si-Si bonds. It is also found that the light emission intensity shows a superlinear dependence on the pump intensity. Interestingly, the film exhibits a net optical gain under ultraviolet excitation. The gain coefficient is 53.5 cm under a pumping power density of 553 mW cm. The present results demonstrate that the SiCO system can be a very competitive candidate in the applications of photonics and optoelectronics.

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Section: Introductionmentioning

confidence: 99%

Defect Emission and Optical Gain in SiC_xO_y:H Films

Lin

Huang

et al. 2017

ACS Appl. Mater. Interfaces

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“…SiC x O y materials are a promising platform to realise direct white light emission because of their potential for desirable chromaticity and wide tuneable optical bandgaps 14 , 26 , 36 – 38 . Compared with other techniques to prepare SiC x O y materials such as the sol–gel method 39 , 40 , C-ion implanted SiO 2 41 , chemical vapour deposition 42 , 43 and direct-current arc discharge plasma 38 , the advantage of laser irradiation method is in the efficiency of the process.…”

Section: Resultsmentioning

confidence: 99%

Selective 6H-SiC White Light Emission by Picosecond Laser Direct Writing

Wang

Lin

et al. 2018

Sci Rep

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Displaying a full or tuneable emission spectrum with highly efficient is significant for luminescent materials used in solid-state lighting. Silicon carbide (SiC) has potential for use in photoelectric devices that operate under extreme conditions. In this paper, we present a method to selectively modify the photoluminescence (PL) properties of SiC by ultrafast laser direct writing. Based on this method, visible white PL could be observed by the naked eye at room temperature under ultraviolet excitation. By increasing the laser power intensity from 40 to 80 MW/cm2, the PL of the irradiated samples increased and pure white sunlight-like emission with controlled colour temperature was realised. The optimised laser power intensity of 65 MW/cm2 achieved a desirable colour temperature similar to that of sunlight (x = 0.33, y = 0.33 and colour temperature of 5500 K) and suppressed blue emission. By direct laser irradiation along designed scanning path, a large-scale and arbitrary pattern white emission was fabricated. The origin of the white luminescence was a mixture of multiple luminescent transitions of oxygen-related centres that turned the Si-C system into silicon oxycarbide. This work sheds light on new luminescent materials and a preparation technique for next-generation lighting devices.

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“…However, it has been observed the incorporation of source precursor fragments and decomposition byproducts in the deposited films, which resulted in enhanced stress levels and increased defect density, both of which affecting the optical performance of the materials and device structures. Recently, Lin et al reported the growth of amorphous SiC x O y by very high-frequency PECVD technique [ 88 ]. An extensive review on the synthesis and properties of SiC x O y films is presented in [ 89 ].…”

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

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A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

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Effect of thermal annealing on the blue luminescence of amorphous silicon oxycarbide films

Cited by 19 publications

References 32 publications

Defect Emission and Optical Gain in SiC_xO_y:H Films

Defect Emission and Optical Gain in SiC_xO_y:H Films

Selective 6H-SiC White Light Emission by Picosecond Laser Direct Writing

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

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Effect of thermal annealing on the blue luminescence of amorphous silicon oxycarbide films

Cited by 19 publications

References 32 publications

Defect Emission and Optical Gain in SiCxOy:H Films

Defect Emission and Optical Gain in SiCxOy:H Films

Selective 6H-SiC White Light Emission by Picosecond Laser Direct Writing

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

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Product

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Defect Emission and Optical Gain in SiC_xO_y:H Films

Defect Emission and Optical Gain in SiC_xO_y:H Films