“…14 shows the typical dual-sweep transfer curves of our devices. The normalized hysteresis width is 40 mV/MV cm −1 , which is on par with reported hysteresis values and indicates the presence of low border traps and interface states 39 . Fig.…”
Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.
“…14 shows the typical dual-sweep transfer curves of our devices. The normalized hysteresis width is 40 mV/MV cm −1 , which is on par with reported hysteresis values and indicates the presence of low border traps and interface states 39 . Fig.…”
Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.
“…[ 1 ] Consequently, dramatic attention has been drawn to employing new semiconductor materials or novel device architectures as alternative routes to replace conventional silicon‐based electronics, aiming to realize the continued growth and miniaturization of information technology. [ 2–4 ]…”
Metal‐halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low‐dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low‐dimensional perovskite memories, involving both molecular‐level perovskites and structure‐level nanostructures, are comprehensively reviewed. The property–performance correlation is discussed in‐depth, aiming to present effective strategies for designing memory devices based on this new class of high‐performance materials. Finally, the existing challenges and future opportunities are presented.
“…The integration of these freestanding complex oxides with 2D materials, however, was not reported until very recently by two research groups in parallel with preparation of our work. In these two recent works , SrTiO 3 (STO) thin layers are isolated freestanding and used as high-κ dielectrics for field-effect transistors based on 2D materials. Yang et al show that in devices utilizing a freestanding layer of STO, ON/OFF ratios of 10 8 and subthreshold swings of 66 mV/dec can be achieved .…”
mentioning
confidence: 99%
“…Huang et al. show that the STO layer is exceptional for use as a dielectric layer because it possesses a subone-nanometer capacitance equivalent thickness with a low leakage current (less than 10 –2 A·cm –2 at 2.5 MV·cm –1 ) …”
mentioning
confidence: 99%
“…This polarization influences the electronic properties of the 2D material-oxide interface, and its switchable character provides an additional tuning parameter for device operation. Memristive properties have, in this way, been added to 2D-based field effect transistors and tunnel junctions. − As already achieved with the dielectric STO, , any step forward in facilitating the stackable aspect of these ferroelectric components would immediately expand their potential applications, using the van der Waals integration strategy to fabricate novel hybrid 2D heterostructures.…”
We demonstrate the fabrication of field-effect transistors
based
on single-layer MoS2 and a thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate.
Thin BTO provides an ultrahigh-κ gate dielectric effectively
screening Coulomb scattering centers. These devices show mobilities
substantially larger than those obtained with standard SiO2 dielectrics and comparable with values obtained with hexagonal boron
nitride, a dielectric employed for fabrication of high-performance
two-dimensional (2D) based devices. Moreover, the ferroelectric character
of BTO induces a robust hysteresis of the current vs gate voltage
characteristics, attributed to its polarization switching. This hysteresis
is strongly suppressed when the device is warmed up above the tetragonal-to-cubic
transition temperature of BTO that leads to a ferroelectric-to-paraelectric
transition. This hysteretic behavior is attractive for applications
in memory storage devices. Our results open the door to the integration
of a large family of complex oxides exhibiting strongly correlated
physics in 2D-based devices.
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