2023
DOI: 10.1021/acsaelm.3c00568
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High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States

Mantu K. Hudait,
Michael B. Clavel,
Sengunthar Karthikeyan
et al.

Abstract: Tensile strained germanium (ε-Ge) layers heterogeneously integrated on Si substrates are of technological importance for nanoscale transistors and photonics. In this work, the tunable tensile strained (0% to 1.2%) ε-Ge layers were grown by solid source molecular beam epitaxy using GaAs and linearly graded In x Ga1–x As as intermediate buffers, and their structural and metal-oxide semiconductor capacitor (MOS-Cs) properties were analyzed as a function of strain and process conditions. X-ray topography measureme… Show more

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