High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States
Mantu K. Hudait,
Michael B. Clavel,
Sengunthar Karthikeyan
et al.
Abstract:Tensile strained germanium (ε-Ge) layers heterogeneously
integrated on Si substrates are of technological importance for nanoscale
transistors and photonics. In this work, the tunable tensile strained
(0% to 1.2%) ε-Ge layers were grown by solid source molecular
beam epitaxy using GaAs and linearly graded In
x
Ga1–x
As as intermediate
buffers, and their structural and metal-oxide semiconductor capacitor
(MOS-Cs) properties were analyzed as a function of strain and process
conditions. X-ray topography measureme… Show more
Tensile strained germanium (ε-Ge) has found significant interest due to its unique properties for emerging optoelectronic devices. High tensile strained Ge materials with superior quality are still being investigated due...
Tensile strained germanium (ε-Ge) has found significant interest due to its unique properties for emerging optoelectronic devices. High tensile strained Ge materials with superior quality are still being investigated due...
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