High-voltage TFT fabricated in recrystallized polycrystalline silicon

Unagami, Takashi; Kogure, Osamu

doi:10.1109/16.2457

Cited by 42 publications

(24 citation statements)

References 7 publications

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“…Accordingly, poly-Si TFTs with narrow and multiple channels have been proposed to enhance electrical characteristics. [11][12][13] However, no complete reliability analysis has been carried out in the poly-Si TFTs with narrow and multiple channels.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics and Reliability of Multi-channel Polycrystalline Silicon Thin-Film Transistors

Shieh

Sang

Chen

et al. 2006

jjap

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We demonstrate the fabrication process and the electrical characteristics of n-channel polycrystalline silicon thin-film transistors (poly-Si TFTs) with different numbers of channel stripes. The device's electrical characteristics, such as on-current, threshold voltage, and subthreshold swing, were improved by increasing the number of channel stripes due to the enhancement of gate control. However, the electric field strength near the drain side was enlarged in multi-channel structures, causing severe impact ionization. The degradation of device's reliability under various electrical stress conditions was suggested.

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Section: Introductionmentioning

confidence: 99%

Electrical Characteristics and Reliability of Multi-channel Polycrystalline Silicon Thin-Film Transistors

Shieh

Sang

Chen

et al. 2006

jjap

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“…Besides, the applications of TFTs are mainly limited to lowtemperature flat-panel displays because the grain boundaries in the channel region substantially degrade performance. The electrical properties of the TFTs can be improved by enlarging the grains, and the number of grain boundaries in the channel region can be minimized [11,12]. Therefore, in this work, we develop a series of multi-channel with different widths and gate lengths pattern-dependent MILC TFTs (PDMILC TFTs) to study the relationship between the device dimensions and the field effect mobility.…”

Section: Introductionmentioning

confidence: 99%

P-12: Mobility Enhancement of Pattern-dependent Metal-Induced Lateral Crystallization Polysilicon Thin-Film Transistors with Different Dimensions

Chou

et al. 2005

SID Symposium Digest

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A new method for enhancing the mobility of the polysilicon thinfilm transistors (poly-Si TFT) by pattern-dependent metalinduced-lateral-crystallization (PDMILC) with different device dimensions were successfully demonstrated and characterized. The experimental results indicate that the field effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of its poly-Si grain was increased. For the gate length of 2 um, the ten nano-wire channels (M10) PDMILC poly-Si TFT had the greatest mobility of 107.79 cm 2 /Vs and the smallest subthreshold swing (SS) of 0.23 V/dec. The mobility also increased with the decline in the gate length, because the number of poly-Si grain boundary defects was reduced.

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“…It is well known that hydrogen from the plasma migrates through the gate oxide into the poly-Si channel region [8]. Multi-channel structure TFT has been reported to increase the hydrogenation effects due to expanded hydrogenation pathway [9] [ 10].…”

Section: Introductionmentioning

confidence: 99%

A Novel Multi-Channel Poly-Si TFT Improving Hydrogen Passivation

et al. 1997

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ABSTARCTWe have fabricated a new multi-channel polycrystalline silicon thin film transistor (ploy-Si TFT), of which structure may be more effectively hydrogenated than conventional multi-channel poly-Si TFT. The new multi-channel TFT has stripe-cuts in gate electrode so that more hydrogen radicals penetrate into the gate oxide and passivate the active poly-Si layer. After 90 min. hydrogenation of the new device, the electrical characteristics such as threshold voltage and field effect mobility are improved more than those of conventional device.The new multi-channel poly-Si TFT, which receives more hydrogen radicals thorough gate oxide than the conventional multi-channel TFT, can be hydrogenated effectively in long channel devices. Besides the improvement of the device characteristics, our experimental results show that the dominant hydrogenation path is the diffusion though the gate oxide.

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High-voltage TFT fabricated in recrystallized polycrystalline silicon

Cited by 42 publications

References 7 publications

Electrical Characteristics and Reliability of Multi-channel Polycrystalline Silicon Thin-Film Transistors

Electrical Characteristics and Reliability of Multi-channel Polycrystalline Silicon Thin-Film Transistors

P-12: Mobility Enhancement of Pattern-dependent Metal-Induced Lateral Crystallization Polysilicon Thin-Film Transistors with Different Dimensions

A Novel Multi-Channel Poly-Si TFT Improving Hydrogen Passivation

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