High‐voltage superjunction VDMOS with low reverse recovery loss

Zhu, Junjie; Yang, Zenan; Sun, Weifeng; Qian, Qinsong; Xu, Shen; Yi, Yaohua

doi:10.1049/el.2012.3541

Cited by 5 publications

(3 citation statements)

References 8 publications

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“…We chose the circuit of Figure 8 c to simulate the reverse recovery characteristics of the DT-LBDMOS and GPMOS. The gate resistance R g is 10 Ω; the switching speed of N 1 can be changed by changing the resistance value of R g , thus changing the reverse recovery speed of devices being tested [ 25 , 26 ]. Figure 8 d shows the pulse information applied to the gate during the test and the handover process of the circuit’s current loop.…”

Section: Simulation Results and Analysismentioning

confidence: 99%

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

Zhang

et al. 2023

Micromachines

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In this article, a 1.2-kV-rated double-trench 4H-SiC MOSFET with an integrated low-barrier diode (DT-LBDMOS) is proposed which eliminates the bipolar degradation of the body diode and reduces switching loss while increasing avalanche stability. A numerical simulation verifies that a lower barrier for electrons appears because of the LBD; thus, a path that makes it easier for electrons to transfer from the N+ source to the drift region is provided, finally eliminating the bipolar degradation of the body diode. At the same time, the LBD integrated in the P-well region weakens the scattering effect of interface states on electrons. Compared with the gate p-shield trench 4H-SiC MOSFET (GPMOS), the reverse on-voltage (VF) is reduced from 2.46 V to 1.54 V; the reverse recovery charge (Qrr) and the gate-to-drain capacitance (Cgd) are 28% and 76% lower than those of the GPMOS, respectively. The turn-on and turn-off losses of the DT-LBDMOS are reduced by 52% and 35%. The specific on-resistance (RON,sp) of the DT-LBDMOS is reduced by 34% due to the weaker scattering effect of interface states on electrons. The HF-FOM (HF-FOM = RON,sp × Cgd) and the P-FOM (P-FOM = BV2/RON,sp) of the DT-LBDMOS are both improved. Using the unclamped inductive switching (UIS) test, we evaluate the avalanche energy of devices and the avalanche stability. The improved performances suggest that DT-LBDMOS can be harnessed in practical applications.

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Section: Simulation Results and Analysismentioning

confidence: 99%

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

Zhang

et al. 2023

Micromachines

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“…The PN junction formed between the P-base and N-drain is used to support high voltages by utilizing a lightly doped drift region. In this paper, based on VDMOS (Vertical-Diffused MOSFET) [11][12][13] and UMOS (U-shaped groove MOSFET) [14,15] structures, the novel VD-GCBFET (figure 1(a)) and U-GCBFET (figure 1(b)) structures are proposed and investigated for the first time by applying the base-gate short contact instead of the original base-source short contact. The simplified circuit diagram is equivalent to that the MOSFET in parallel with the composite BJT, as shown in figure 1(c).…”

Section: Device Structurementioning

confidence: 99%

Novel gate-controlled bipolar composite field effect transistor with large on-state current

Duan¹,

Sun²,

Dong³

et al. 2020

Semicond. Sci. Technol.

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Novel gate-controlled bipolar composite field effect transistors (GCBFET) based on vertical MOSFETs are proposed and investigated in this paper for the first time, named VD-GCBFET and U-GCBFET, respectively, which feature the base-gate short connection mode instead of the conventional base-source short connection mode. When the devices are turned on, the composite bipolar junction transistor (BJT) provides an additional holes injection path, which is conducive to obtaining larger forward on-state current. Two conductive paths provided by the composite BJT and MOS structure not only improve the integration degree, but also greatly increase the forward on-state current while the breakdown mechanism remains unchanged. The simulation results show that, with the same structural parameters, the proposed GCBFETs have the same breakdown voltage and much lower threshold voltage compared with the corresponding vertical MOSFETs. Meanwhile, the proposed GCBFETs gain much larger forward on-state current which is over two orders of magnitude higher than that of the corresponding vertical MOSFETs. Moreover, due to the introduction of extra holes by the composite BJT, the proposed GCBFET has similar slow switching speed as IGBT.

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“…SiC Schottky diodes also have the added benefits of higher junction temperature operation and a Figure 2. Pinch-off MOSFET Voltage and Current Waveforms [8] negative temperature coefficient for forward voltage drop, making it possible to parallel several devices and ensure current sharing [11].…”

Section: A Bldc Motor Drive Applicationsmentioning

confidence: 99%

Reducing Switching Losses in BLDC Motor Drives by Reducing Body Diode Conduction of MOSFETs

Brown

Sarlioglu

2015

IEEE Trans. on Ind. Applicat.

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This paper presents a new power electronic topology that aims to reduce switching losses in hard switched inverters for brushless DC motor drive. This is achieved by extending the benefits of synchronous rectification used in lowvoltage switch-mode dc/dc conversion to high-voltage motor drive applications, and by minimizing the reverse conduction behavior of the intrinsic body diode of the synchronous rectifier MOSFET. The proposed topology for reducing body diode conduction includes the addition of a MOSFET in series with the rectifying switch and a SiC Schottky diode around the series switch combination. The paper focuses on theory, simulations, and experimental results, and validates the benefits of proposed new topology for brushless dc motor drive applications. An extension of this topology for sinusoidal backemf permanent magnet motors is also presented. I.0093-9994 (c)

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High‐voltage superjunction VDMOS with low reverse recovery loss

Cited by 5 publications

References 8 publications

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

Novel gate-controlled bipolar composite field effect transistor with large on-state current

Reducing Switching Losses in BLDC Motor Drives by Reducing Body Diode Conduction of MOSFETs

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