Abstract:In this article, a 1.2-kV-rated double-trench 4H-SiC MOSFET with an integrated low-barrier diode (DT-LBDMOS) is proposed which eliminates the bipolar degradation of the body diode and reduces switching loss while increasing avalanche stability. A numerical simulation verifies that a lower barrier for electrons appears because of the LBD; thus, a path that makes it easier for electrons to transfer from the N+ source to the drift region is provided, finally eliminating the bipolar degradation of the body diode. … Show more
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