High-voltage super-junction lateral double-diffused metal—oxide semiconductor with a partial lightly doped pillar

Wu, Wei; Zhang, Bo; Fang, Jian; Luo, Xiaorong; Li, Zhaoji

doi:10.1088/1674-1056/22/6/068501

Cited by 6 publications

(2 citation statements)

References 15 publications

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“…However, the SJ-LDMOST implemented on the bulk silicon substrates suffer from the substrate-assisted depletion (SAD) effect [3], which causes the charge imbalance and thus reduces the BV of the devices. To alleviate the SAD effect, several new structures have been developed [4][5][6][7][8]. Wherein the SJ-LDMOS with a buffer layer (N-buffered SJ-LDMOS) can effectively eliminate the SAD effect and be compatible with the conventional bipolar-complementary MOS-DMOS (BCD) process.…”

Section: Introductionmentioning

confidence: 99%

Super junction LDMOS with step field oxide layer

Cao

Duan

Yuan

et al. 2016

Micro & Nano Letters

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A novel step-oxide super junction-lateral double-diffused metal-oxide-semiconductor field-effect transistor (SOSJ-LDMOS) structure is proposed and optimised which allows the high breakdown voltage (BV) and low-specific on-resistance (R on,sp). The proposed structure overcomes the effect of thick field oxide formed by shallow trench isolation process in conventional buffer layer SJ-LDMOS (N-buffered SJ-LDMOS), effectively enhancing the performance of the SJ-LDMOS. Thanks to the SO layer, a new electric field peak has been introduced in the surface electric field distribution, which makes the lateral surface electric field uniform in the off-state. Moreover, due to the thinner oxide layer, in the on-state the majority of electron current is accumulated near the top surface under the field plate and the thinner oxide layer also provides a wider current flowing path. In the virtue of integrated systems engineering (ISE) simulation, not only has the BV of SOSJ-LDMOS been increased, but also the R on,sp has been reduced simultaneously compared with the N-buffered SJ-LDMOS in the same drift length. In addition, when SOSJ-LDMOS and N-buffered LDMOS are at the same BV, the R on,sp of SOSJ-LDMOS is decreased by 26.3-38.9%, compared with the N-buffer SJ-LDMOS.

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Section: Introductionmentioning

confidence: 99%

Super junction LDMOS with step field oxide layer

Cao

Duan

Yuan

et al. 2016

Micro & Nano Letters

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“…Based on an SJ concept, several new structures have been developed. [7][8][9][10][11][12] In this paper, we propose a novel LDMOS with a buried improved superjunction (BISJ) layer. The BISJ layer not only enhances the reduced surface field (RESURF) effect, [13] but also provides a bulk low on-resistance path.…”

Section: Introductionmentioning

confidence: 99%

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

Wu¹,

Zhang²,

Luo³

et al. 2014

Chinese Phys. B

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A novel low specific on-resistance (R on,sp ) lateral double-diffused metal oxide semiconductor (LDMOS) with a buried improved super-junction (BISJ) layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce R on,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage (BV). The BISJ LDMOS exhibits a BV of 300 V and R on,sp of 8.08 mΩ•cm 2 which increases BV by 35% and reduces R on,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 µm, respectively.

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Low specific on-resistance power MOSFET with a surface improved super-junction layer

Zhang

Luo

et al. 2014

Superlattices and Microstructures

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High-voltage super-junction lateral double-diffused metal—oxide semiconductor with a partial lightly doped pillar

Cited by 6 publications

References 15 publications

Super junction LDMOS with step field oxide layer

Super junction LDMOS with step field oxide layer

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

Low specific on-resistance power MOSFET with a surface improved super-junction layer

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