High voltage sensitivity GaAs planar doped barrier diodes for microwave∕millimetre-wave zero-bias power detector applications

Energy Band Control of GaAsSb-Based Backward Diodes to Improve Sensitivity of Millimeter-Wave Detection

“…Several zero-bias detectors for millimeter-and sub-millimeter-wave detections have been reported. [16][17][18][19] Of these diodes, backward diodes are attracting attention as devices for achieving a high sensitivity in millimeter-wave detection since they have a stronger nonlinearity 20) than Schottky diodes at zero bias. Typical backward diodes 21,22) have a p-n homojunction with nearly degenerate doping, differing from Esaki diodes 23) with a strong degeneracy.…”

Characterization and reduction of membrane fouling during nanofiltration of semiconductor indium phosphide (InP) wastewater

“…On one hand, the manufacturing of integrated circuit (IC) chips with an InP wafer is the latest semiconductor technology that has not been in mass production yet but found very promising in optoelectronics communication and outer space solar cells [15][16][17][18]. On the other hand, these intermetallic semiconductor compounds have been well recognized as potential environmental and health hazards [19].…”

Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications

“…12) Hence, zero-bias detectors are needed, and several zero-bias detectors for millimeter-wave detection have been reported. [13][14][15][16] Of these diodes, backward diodes are attracting attention as the ones that achieve high sensitivity in millimeter-wave detection because they have a stronger nonlinearity 17) than Schottky diodes at zero bias. Previously, GaSb-based backward diodes, which have an n-InAs/i-AlSb/p-GaAlSb/p-GaSb heterojunction, were proposed [17][18][19][20] to improve the sensitivity for millimeter waves.…”