2002
DOI: 10.1063/1.1429785
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High voltage pulse discharge for ion treatment of metals

Abstract: It is well known that the production of semiconductors and chips with required parameters and properties is based on ion beam technology. However, the industrial use of ion beams still remains a problem because it requires a high rate and homogeneous treatment of the samples of complex configuration. Plasma technologies can make an efficient contribution to improving the tribological and corrosion characteristics of the most important workpieces for industrial machines. In the present report, consideration is … Show more

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Cited by 23 publications
(20 citation statements)
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“…Resumen-La implantación iónica tridimensional (3DII) [1] es una técnica de tratamiento superficial avanzado [2], la cual es realizada en el dispositivo JUPITER (Joint Universal Plasma and Ion Technologies Experimental Reactor) [3] mediante una descarga pulsada de alto voltaje a bajas presiones en un gas encendida en la rama izquierda de la curva de Paschen [4]- [5], cuyo objetivo principal es mejorar las propiedades tribológicas. Para la protección superficial de materiales expuestos en medios agresivos se realiza la modificación del dispositivo JUPITER que consiste en la instalación en de un vaporizador de arco eléctrico en la cámara de descarga [6].…”
unclassified
“…Resumen-La implantación iónica tridimensional (3DII) [1] es una técnica de tratamiento superficial avanzado [2], la cual es realizada en el dispositivo JUPITER (Joint Universal Plasma and Ion Technologies Experimental Reactor) [3] mediante una descarga pulsada de alto voltaje a bajas presiones en un gas encendida en la rama izquierda de la curva de Paschen [4]- [5], cuyo objetivo principal es mejorar las propiedades tribológicas. Para la protección superficial de materiales expuestos en medios agresivos se realiza la modificación del dispositivo JUPITER que consiste en la instalación en de un vaporizador de arco eléctrico en la cámara de descarga [6].…”
unclassified
“…The reactor JUPITER (Join Universal of Plasma and Ion Technologies Experimental Reactor) [9] is the only equipment built based on this technology that allow the implantation of ions in solid substrates of metallic and non-metallic species. The parameters that characterize the implementation are: the ion's type, the ion's energy and the implanted dose [1,2,[10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…The modification superficial consists in alter the composition and structure of materials either by creating a coating (with typical thicknesses of a few microns) or by introducing new elements into the surface (dopant ions) in nanometric depths [1].…”
Section: Introductionmentioning
confidence: 99%
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“…In this area, we have started with the gas ion implantation study [1][2][3][4] . The implantation is performed through high voltage pulse discharges ignited in the JUPITER reactor which is set up in Plasma Physics Laboratory at the Universidad Industrial de Santander (Colombia).…”
Section: Introductionmentioning
confidence: 99%