2008
DOI: 10.1109/tcsii.2008.922444
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High-Voltage-Gain CMOS LNA For 6–8.5-GHz UWB Receivers

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Cited by 21 publications
(17 citation statements)
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“…Several LNA topologies for UWB applications have been presented [35][36][37][38][39][40][41][42][43].…”
Section: Fm-uwb Receivermentioning
confidence: 99%
“…Several LNA topologies for UWB applications have been presented [35][36][37][38][39][40][41][42][43].…”
Section: Fm-uwb Receivermentioning
confidence: 99%
“…However, this gain decreases with frequency in the LNA bandwidth. This drop could be compensated by the first stage [1]. Thereby, a high voltage gain could be obtained.…”
Section: Lna Architecture Overviewmentioning
confidence: 99%
“…This way, practical inductor values leading to high SFR value and high Q factor can be chosen according to the LNA operating bandwidth. Once the values of inductors L 1 and L 2 are fixed, relations (1)(2)(3)(4)(5)(6)(7)(8)(9) give the input matching cell element values for a given power consumption and a given value of the degeneration inductance L S .…”
Section: Broadband Input Matching Cell For Small Fractional Bandwidthsmentioning
confidence: 99%
“…In the case of small fractional bandwidths the input matching cell relations are given by (1)(2)(3)(4)(5)(6)(7)(8)(9). Equation (7) can be approximated by (25) because J 3 must be chosen in order to be low in comparison to unity in the input matching cell design as mentioned above.…”
Section: Voltage Gain Maximizationmentioning
confidence: 99%
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