High-Voltage GaAs Photovoltaic Laser Power Converters

Schubert, Johannes; Oliva, E.; Dimroth, Frank; Guter, W.; Loeckenhoff, R.; Bett, Andreas W.

doi:10.1109/ted.2008.2010603

Cited by 114 publications

(62 citation statements)

References 14 publications

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“…The results are mostly applicable for monochromatic applications using dual-junction cells [11,13], yet they give insight for devices with more junctions, as recently presented in Ref. [14].…”

Section: Photovoltaic Laser Power Convertersmentioning

confidence: 68%

“…Another technological approach is based on monolithic integration. This can be implemented by lateral segmentation (multi-segment cell, also known as monolithic interconnected module or MIM) [10][11][12] or by vertical stacking of several subcells (multi-junction cell) [11][12][13][14]. In this work, cells of the latter approach are investigated, namely, vertically interconnected dual-junction cells realized by monolithic growth of two subcells on top of each other.…”

Section: Photovoltaic Laser Power Convertersmentioning

confidence: 99%

“…For that reason, the device must be carefully designed to achieve current matching, that is, equal current generation in each subcell. For multi-junction cells, current matching is achieved by precisely tuning the thicknesses of the stacked subcells in a way that each subcell absorbs the same fraction of the incident monochromatic light [11]. Due to the Beer-Lambert law of exponential absorption in parallel with the same bandgap of each subcell, this design rule implies that the subcell thickness decreases from bottom to top (and the upmost subcell thickness decreases with increasing number of junctions) [12].…”

Section: Photovoltaic Laser Power Convertersmentioning

confidence: 99%

See 2 more Smart Citations

On the temperature dependence of dual‐junction laser power converters

Reichmuth

Helmers

Philipps

et al. 2016

Progress in Photovoltaics

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Dual-junction GaAs laser power converters optimized for one monochromatic wavelength are presented, and their temperature dependence is experimentally evaluated. External quantum efficiency and irradiance-dependent currentvoltage measurements (10 to 104 W/cm 2 ) under monochromatic laser light (809 nm) have been undertaken to quantify temperature-and irradiance-dependent effects on the performance. The temperature dependence of the current matching of the two subcells, caused by the temperature-dependent absorbance, is quantified. Losses in performance due to variations in operating temperature for different power-by-light applications are calculated to be between 16.2% and 21.0%. Future potential enhancements in cell performance are discussed. For elevated temperatures, super-linear behavior of the spectral response with increasing irradiance is observed, which is attributed to effective luminescent coupling from the top to the bottom subcell as the device becomes more radiative limited. For low temperatures, where the bottom cell is overproducing, no dependence on irradiance is found, which shows the influence of photon transport losses to the substrate.

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Section: Photovoltaic Laser Power Convertersmentioning

confidence: 68%

Section: Photovoltaic Laser Power Convertersmentioning

confidence: 99%

Section: Photovoltaic Laser Power Convertersmentioning

confidence: 99%

See 1 more Smart Citation

On the temperature dependence of dual‐junction laser power converters

Reichmuth

Helmers

Philipps

et al. 2016

Progress in Photovoltaics

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“…При разработке ФЭП, работающих в диапазоне длин волн излучения 600−870 nm, оптимальными материа-лами являются полупроводниковые соединения GaAs и GaInAsP. В ФЭП с активной областью на основе GaAs достигнута наибольшая эффективность (более 50%) при преобразовании лазерного излучения в диапазоне длин волн 800−870 nm [7][8][9][10] для рабочей длины волны излучения 808 nm, при внешнем квантовом выходе фо-тоответа, близком к 100%. Теоретически рассчитанный предел КПД ФЭП на основе GaAs при преобразо-вании монохроматического излучения с длиной вол-ны 870 nm составляет 78% при плотности фототока порядка 10 A/cm 2 [8].…”

Section: (поступило в редакцию 8 декабря 2017 г)unclassified

Влияние структуры омических контактов на характеристики GaAs/AlGaAs фотоэлектрических преобразователей

Малевская¹,

Kalinovskii²,

Ильинская³

et al. 2018

Журнал Технической Физики

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“…These multi-subcell photovoltaic devices are featuring record conversion efficiencies. [12][13][14][15][16][17][18][19][20][21][22] However, while the upper limit of the p/n junction thickness has been well characterized in the past for GaAs or other III-V semiconductor alloys, the lower limit of the base thickness is still unknown despite the great progress in the field recently. [23][24][25][26][27][28] In this work, we therefore explore the thinnest p/n junctions achievable in practice in GaAs VEHSA structures.…”

mentioning

confidence: 99%

High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%

Fafard

Proulx

York

et al. 2016

Applied Physics Letters

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Photovoltaic power converting III–V semiconductor devices based on the Vertical Epitaxial HeteroStructure Architecture (VEHSA) design have been achieved with up to 20 thin p/n junctions (PT20). Open circuit photovoltages in excess of 23 V are measured for a continuous wave monochromatic optical input power of ∼1 W tuned in the 750 nm–875 nm wavelength range. Conversion efficiencies greater than 60% are demonstrated when the PT20 devices are measured near the peak of their spectral response. Noticeably, the PT20 structure is implemented with its narrowest ultrathin base having a thickness of only 24 nm. In the present study, the spectral response of the PT20 peaks at external quantum efficiency (EQE) of 89%/20 for an input wavelength of 841 nm. We also performed a detailed analysis of the EQE dependence with temperature and for VEHSA structures realised with a varied number of p/n junctions. The systematic study reveals the correlations between the measured conversion efficiencies, the EQE behavior, and the small deviations in the implementation of the optimal designs. Furthermore, we modeled the photovoltage performance of devices designed with thinner bases. For example, we derive that the narrowest subcell of a PT60 structure would have a base as thin as 8 nm, it is expected to still generate an individual subcell photovoltage of 1.14 V, and it will begin to feature 2-dimensional quantum well effects.

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High-Voltage GaAs Photovoltaic Laser Power Converters

Cited by 114 publications

References 14 publications

On the temperature dependence of dual‐junction laser power converters

On the temperature dependence of dual‐junction laser power converters

Влияние структуры омических контактов на характеристики GaAs/AlGaAs фотоэлектрических преобразователей

High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%

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