High-voltage double-implanted power MOSFET's in 6H-SiC

Shenoy, J. N.; Cooper, James A.; Melloch, M. R.

doi:10.1109/55.556091

Cited by 232 publications

(72 citation statements)

References 12 publications

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“…The model can be described as a sub-circuit within the same SPICE code and can be run in any commercial SPICE simu lator. Since DIMOS is a power device, its channel length, width, and other device dimensions are big enough to neglect the second order effects in the model equations, and the simu lation can be carried out as SPICE level 1 or level 2 [12][13].…”

Section: Macromodel Structurementioning

confidence: 99%

A New Spice Macromodel of 4H-SiC Vertical Double Implanted MOSFET (DIMOS)

Lotfi¹,

Dibi²,

Toufik³

2013

MSSE

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The4H-SiCvert ical double Imp lanted MOSFET (DIM OS) offers advantages over conventional silicon devices, enabling high system efficiency and/or reduced system size, weight and cost through its higher frequency operation. Co mpared to the best silicon IGBTs, the SiC device will improve system efficiency up to 2% and operate at 2-5 times the switching frequencies.In this paper we present an equivalent circuit Spice of 4H-SiC DIM OSFET fo r a wide temperature range. Simu lation for DC characteristics (I-V) of the SiC M OSFET with the exact device geometry is carried out using the commercial device simu lator Spice. All Sp ice parameters are extracted fro m the measurements, and a SPICE model for the DIMOS transistor has been developed and implemented in the circuit simu lator Orcad PSpice 10.5. The temperature dependent behaviour was simulated and analysed. A good agreement between the Spice simulat ion and analytical model evaluation for SiC DIMOS is demonstrated. Model parameters can be adjusted to obtain an optimu m device to be used in power system applications.

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Section: Macromodel Structurementioning

confidence: 99%

A New Spice Macromodel of 4H-SiC Vertical Double Implanted MOSFET (DIMOS)

Lotfi¹,

Dibi²,

Toufik³

2013

MSSE

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“…Пока наибольшее внимание уде-лялось транзисторам с инверсным n-каналом. В таких транзисторах с U-образной канавкой (UMOSFETs [2]) и с двойной имплантацией доноров и акцепторов (DMOSFETs [3]) рекордная подвижность электронов в приповерхностном инверсном канале не превышает 100 см 2 /В [4], что почти на порядок ниже по сравне-нию с объемной подвижностью электронов в 4H-SiC. Низкую подвижность связывают, во-первых, с высокой плотностью поверхностных состояний (ПС) на границе раздела SiO 2 /4H-SiC (наличие ПС с энергиями вблизи дна зоны проводимости приводит к захвату свободных электронов и их кулоновскому рассеянию) и, во-вторых, с шероховатостью поверхности карбида кремния, ко-торая появляется как при травлении канавок, так и при высокотемпературном отжиге имплантированных слоев.…”

Section: Introductionunclassified

О пространственной локализации свободных электронов в n-канальных МОП-транзисторах на основе 4H-SiC

Иванов¹

2018

Физика И Техника Полупроводников

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The problem of the spatial localization of free electrons in 4 H -SiC metal—oxide—semiconductor field effect transistors (MOSFETS) with an accumulation- and inversion-type n channel is theoretically analyzed. The analysis demonstrates that, in optimally designed accumulation transistors (ACCUFETs), the average distance from the surface, at which free electrons are localized, may be an order of magnitude larger than that in inversion MOSFETs. This can make 4 H -SiC ACCUFETs advantageous as regards the effective carrier mobility in a conducting channel.

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“…Both 6H-and 4H-SiC materials are industrially produced, and high voltage devices have been commercialized based on these hexagonal SiC polytypes. 1,2 Although 3C-SiC would offer significant benefits over hexagonal SiC because of the high electron mobility, high-saturated electronic drift velocities, and isotropic properties, 3 it has not demonstrated comparable quality to the 6H and 4H-SiC polytypes. A major reason is its metastable phase formation, which makes it to form only at certain temperatures, and sensitivity to vapour phase composition.…”

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confidence: 99%

Considerably long carrier lifetimes in high-quality 3C-SiC(111)

Sun

Ivanov

Liljedahl

et al. 2012

Applied Physics Letters

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As a challenge and consequence due to its metastable nature, cubic silicon carbide (3C-SiC) has only shown inferior material quality compared with the established hexagonal polytypes. We report on growth of 3C-SiC(111) having a state of the art semiconductor quality in the SiC polytype family. The x-ray diffraction and low temperature photoluminescence measurements show that the cubic structure can indeed reach a very high crystal quality. As an ultimate device property, this material demonstrates a measured carrier lifetime of 8.2 mu s which is comparable with the best carrier lifetime in 4 H-SiC layers. In a 760-mu m thick layer, we show that the interface recombination can be neglected since almost all excess carriers recombines before reaching the interface while the surface recombination significantly reduces the carrier lifetime. In fact, a comparison of experimental lifetimes with numerical simulations indicates that the real bulk lifetime in such high quality 3C-SiC is in the range of 10-15 mu s

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High-voltage double-implanted power MOSFET's in 6H-SiC

Cited by 232 publications

References 12 publications

A New Spice Macromodel of 4H-SiC Vertical Double Implanted MOSFET (DIMOS)

A New Spice Macromodel of 4H-SiC Vertical Double Implanted MOSFET (DIMOS)

О пространственной локализации свободных электронов в n-канальных МОП-транзисторах на основе 4H-SiC

Considerably long carrier lifetimes in high-quality 3C-SiC(111)

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