High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor

Abstract

We fabricated and characterized black polycrystalline diamond field effect transistors. By implementing a C-H bonded channel with a wide gate-drain length up to 20 μm, a breakdown voltage of 1.8 kV was achieved, which is the highest value reported for a diamond field effect transistor (FET) to date. Several of our devices achieved a breakdown voltage/wide gate-drain length ratio > 100 V/μm. This is comparable to the performance of lateral SiC and GaN FETs. We investigated the effects of voltage stress up to 2.0 kV, and showed that the maximum current density fell to 26% of its initial value of 2.42 mA/mm before the device eventually broke down at 1.1 kV.

Progress Toward Diamond Power Field‐Effect Transistors

“…An example is shown in Figure . Al 2 O 3 overcoated diamond devices have demonstrated a wide operational temperature range, −263 (10 K) to 400 °C, high voltage operation > 1 kV, unity‐current‐gain frequency, f T , of 70 GHz, and maximum frequency of oscillation, f max , of 120 GHz . The high voltage operation and inherent high thermal conductivity, ≈20 times that of Si, demonstrates the feasibility of a diamond FET superior to those formed in other semiconductors.…”

“…Kueck first reported the use of ALD of Al 2 O 3 to stabilize diamond's surface conductance. Metal‐insulator field‐effect transistors, MISFETs, made with this coating were stable in time over a wide range of temperatures and were reasonably stable under high voltage operation . However, the high surface resistance from 8 to 12 kΩ sq −1 for (100) oriented diamond substrates limits the drain current .…”

“…An example is shown in Figure 3. Al 2 O 3 overcoated diamond devices have demonstrated a wide operational temperature range, À263 (10 K) to 400 C, [21] high voltage operation > 1 kV, [22] unity-current-gain frequency, f T , of 70 GHz, [23] and maximum frequency of oscillation, f max , of Table 1. Summary of electrical and thermal properties of commonly used and future semiconductors.…”

“…Metal-insulator field-effect transistors, MISFETs, made with this coating were stable in time over a wide range of temperatures and were reasonably stable under high voltage operation. [21,22] However, the high surface resistance from 8 to 12 kΩ sq À1 for (100) oriented diamond substrates limits the drain current. [39] Looking for a coating that would both stabilize the diamond surface and generate resistances <5 kΩ sq À1 , the transition metal oxides WO 3 , MoO 3 , V 2 O 5 , Nb 2 O 3 , and ReO 3 were considered.…”

Polycrystalline Boron-doped Diamond Electrolyte-solution-gate Field-effect Transistor Applied to the Measurement of Water Percentage in Ethanol

“…The typical specification of diamond is described in our previous work. 12 To fabricate the boron-doped diamond layers, 10-mm-square polycrystalline diamond substrates were deposited using a quartz-type microwave CVD reactor. The typical conditions were the same as described in our previous report.…”