“…To decrease/improve the pH sensitivity of BDD SGFET sensor, the direct-wetted diamond surface, employed as the FET channel, was modified to partially fluorine-terminated BDD and partially oxygen-terminated BDD with the help of the method used in the previous study [ 8 , 9 , 10 , 11 , 16 ]. Figure 1 a,b illustrate the schematic diagrams of the pH-insensitive fluorine-terminated BDD (C-F BDD) SGFET surface and the pH-sensitive oxygen-terminated BDD (C-O BDD) SGFET surface.…”
Section: Methodsmentioning
confidence: 99%
“…We recently reported no-gate-insulator electrolyte-solution-gate field-effect transistors (SGFETs) with a single crystal diamond surface channel [4,5,6,7], with a polycrystalline diamond surface channel, and with a boron-doped diamond surface channel [8,9,10,11]. The ISFET has been a promising candidate for an integrated device to realize a high-response chemical sensor at a low cost.…”
Section: Introductionmentioning
confidence: 99%
“…After Bergveld [ 1 ] first presented an ion-sensitive field-effect transistor (ISFET), various types of ISFET have been presented, i.e., silicon-based ISFETs (Si-ISFETs) with an insulator of tantalum pentaoxide (Ta 2 O 5 ), with silicon nitride (Si 3 N 4 ), with aluminum oxide (Al 2 O 3 ) [ 2 ], and with a diamond-like carbon insulator [ 3 ]. We recently reported no-gate-insulator electrolyte-solution-gate field-effect transistors (SGFETs) with a single crystal diamond surface channel [ 4 , 5 , 6 , 7 ], with a polycrystalline diamond surface channel, and with a boron-doped diamond surface channel [ 8 , 9 , 10 , 11 ]. The ISFET has been a promising candidate for an integrated device to realize a high-response chemical sensor at a low cost.…”
A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2–10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.
“…To decrease/improve the pH sensitivity of BDD SGFET sensor, the direct-wetted diamond surface, employed as the FET channel, was modified to partially fluorine-terminated BDD and partially oxygen-terminated BDD with the help of the method used in the previous study [ 8 , 9 , 10 , 11 , 16 ]. Figure 1 a,b illustrate the schematic diagrams of the pH-insensitive fluorine-terminated BDD (C-F BDD) SGFET surface and the pH-sensitive oxygen-terminated BDD (C-O BDD) SGFET surface.…”
Section: Methodsmentioning
confidence: 99%
“…We recently reported no-gate-insulator electrolyte-solution-gate field-effect transistors (SGFETs) with a single crystal diamond surface channel [4,5,6,7], with a polycrystalline diamond surface channel, and with a boron-doped diamond surface channel [8,9,10,11]. The ISFET has been a promising candidate for an integrated device to realize a high-response chemical sensor at a low cost.…”
Section: Introductionmentioning
confidence: 99%
“…After Bergveld [ 1 ] first presented an ion-sensitive field-effect transistor (ISFET), various types of ISFET have been presented, i.e., silicon-based ISFETs (Si-ISFETs) with an insulator of tantalum pentaoxide (Ta 2 O 5 ), with silicon nitride (Si 3 N 4 ), with aluminum oxide (Al 2 O 3 ) [ 2 ], and with a diamond-like carbon insulator [ 3 ]. We recently reported no-gate-insulator electrolyte-solution-gate field-effect transistors (SGFETs) with a single crystal diamond surface channel [ 4 , 5 , 6 , 7 ], with a polycrystalline diamond surface channel, and with a boron-doped diamond surface channel [ 8 , 9 , 10 , 11 ]. The ISFET has been a promising candidate for an integrated device to realize a high-response chemical sensor at a low cost.…”
A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2–10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.
“…Polycrystalline diamond SGFETs were fabricated by a process described in our previous work. 14,16,[20][21][22] Following boron-doped polycrystalline diamond film deposition, two electrical contact pads of 200-nm gold on 30-nm titanium were deposited as a source/drain electrode using an electron beam evaporator (EB evaporation Model A500; Edwards). The electrical contact pads were positioned to give a 10-mm channel length and a 500-μm channel width.…”
Section: Sgfet Fabrication and Surface Modificationmentioning
confidence: 99%
“…To advance the commercial viability of diamond sensors, a polycrystalline diamond with an oxygen-terminated surface was also applied in our previous work. 14,[18][19][20][21] In this study, to verify the superiority and viability of an oxygen-terminated polycrystalline diamond surface with a boron-doped layer for biosensor, a partial carboxyl-termination was introduced for the polycrystalline diamond SGFET. A ss-DNA probe was immobilized on the polycrystalline diamond surface via amino coupling.…”
This paper describes a deoxyribonucleic-acid-sensitive electrolyte solution-gate field-effect transistor (SGFET) sensor utilizing a partial carboxyl-terminated boron-doped polycrystalline diamond surface as a linker to connect a deoxyribonucleic acid (DNA) probe. A high density of carboxyl termination on the polycrystalline diamond surface that was employed as a FET channel was achieved using a vacuum ultraviolet system with oxygen gas. A single-stranded DNA probe was immobilized on the polycrystalline diamond channel via amino coupling. The current-voltage characteristics of the polycrystalline diamond SGFET sensor was examined with bias voltages within its potential voltage window. The characteristics of the drain-source current verses the drain-source voltage showed a pinch-off, a shift voltage of up to 40 mV with a coefficient of variation of 4-11% was obtained between hybridization and denaturation. In addition, a single nucleotide mutation of DNA sequence was selectively recognized by the shift voltage up to ca. 10 mV.
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