High voltage 4H-SiC Schottky barrier diodes

Raghunathan, R.; Alok, D.; Baliga, B. Jayant

doi:10.1109/55.790716

Cited by 106 publications

(37 citation statements)

References 7 publications

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“…13 Contrary to those findings, we will show a temperature dependence for the Schottky barrier height of tungsten carbide contacts. In this study, tungsten carbide, with its hardness, chemical inertness, thermal stability and low resistivity (25 µΩ cm) 1 is shown as a reliable contact material to n-and p-type 6H-SiC for very high temperature applications.…”

Section: Introductioncontrasting

confidence: 76%

CVD-based tungsten carbide schottky contacts to 6H-SiC for very high-temperature operation

Lundberg

Östling

Zetterling

et al. 2000

Journal of Elec Materi

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Section: Introductioncontrasting

confidence: 76%

CVD-based tungsten carbide schottky contacts to 6H-SiC for very high-temperature operation

Lundberg

Östling

Zetterling

et al. 2000

Journal of Elec Materi

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“…This electrical behaviour can be explained with the help of the equation of the forward voltage drop of the Schottky diode [25] which is obtained from the thermionic current transport equation above by simply making the forward voltage the subject of the formula:…”

Section: Resultsmentioning

confidence: 99%

“…From Table 1, it can be observed that there is a general decrease of series resistance with annealing temperature. The decrease in series resistance may be attributed to the increase in ionization of the donor atoms at high annealing temperatures [25]. The other reason may be that the contact becomes more intimate with the substrate as the annealing temperature is increased.…”

Section: Resultsmentioning

confidence: 99%

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

et al. 2014

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Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonalsilicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500 -1000 o C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru 2 Si 3 ) at 800 o C,while diffusion of Ru into 6H-SiC commenced at 800 o C . Raman analysis of the thin films annealed at 1000 o C showed clear D and G carbon peaks which was evidence of formation of graphite . At this annealing temperature the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current-voltage characteristic , thereby rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface.

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“…When the BV exceeds 1000V, the drift resistance starts to be the main limiting factor and the increase in R d is a direct consequence of the increase in drift layer thickness and reduction in drift layer doping. We have also included recent published experimental results (Bhatnagar, et al 1992;Raghunathan, et al 1995;Ueno, et al 1995;Weitzel, et al 1996;Mitlehner, et al 1997;Saxena & Steckl 1997;Sing & Palmour 1997;Wahab, et al 1998; in Fig. 7.10.…”

Section: Schottky Rectifiersmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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High voltage 4H-SiC Schottky barrier diodes

Cited by 106 publications

References 7 publications

CVD-based tungsten carbide schottky contacts to 6H-SiC for very high-temperature operation

CVD-based tungsten carbide schottky contacts to 6H-SiC for very high-temperature operation

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

High-Temperature Electronics in Europe

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