High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xiaoning; Zhang, Jinhan; Bao, Qilong; Ke, Wei; Zheng, Yi; Zhao, Chao; Gao, Hongwei; Sun, Qian; Zhang, Zhaofu; Chen, Kevin J.

doi:10.1109/led.2016.2617381

Cited by 77 publications

(32 citation statements)

References 19 publications

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“…The proposed HEMT device was generated on a conventional GaN-on-Silicon wafer with an AlGaN/GaN heterojunction on the top. The configuration details of this wafer can be found in Reference [22] and also in Figure 1a. this LDD could be used to enhance the device's Baliga Figure-of-Merits (BFOM) in a form that has been adopted in recent GaN power device research and is depicted in Equation 1, where BV is the breakdown voltage and is the on-state resistance [19,20]:…”

Section: Device Setup and Mechanismmentioning

confidence: 99%

Section: Device Setup and Mechanismmentioning

confidence: 99%

“…Thus, for simplification, a uniform distribution of such charges is assumed in this research, which is reasonable according to the Reference [26] but still requires further study. Besides, other charges and trap settings in each layer could be found in the original works of UTB-HEMT, extracted from experiments [22,23].…”

Section: Device Setup and Mechanismmentioning

confidence: 99%

“…This process always causes lattice damages and, hereby, low electron mobility [8,15,21]. Fortunately, a novel HEMT architecture that utilizes the charge compensation from the Silicon Nitride (SiN) to the AlGaN ultra-thin barrier (UTB) has been presented [22,23]. In this architecture, one can modulate the concentration of 2DEG induced in an AlGaN/GaN interface without etching the barrier just by adding or removing the SiN layer which supplies the compensation charges.…”

Section: Introductionmentioning

confidence: 99%

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Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

et al. 2019

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In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxing lattice during the process would introduce equivalent negative charges into the under-LCCT region, the electron will be partially squeezed out from this area. The electric field (E-field) around this region will therefore redistribute smoothly. Owing to this, the proposed LCCT-HEMT performs better in power applications. According to the simulation that is calibrated by the experimental data, the Baliga’s figure of merits (BFOM) of LCCT-HEMT is around two times higher than that of the conventional UTB-HEMT, hinting at the promising potential of proposed HEMT.

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Section: Device Setup and Mechanismmentioning

confidence: 99%

Section: Device Setup and Mechanismmentioning

confidence: 99%

Section: Device Setup and Mechanismmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

et al. 2019

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“…It has been reported that the LPCVD-SiN x can suppress deep states at the SiN x /HEMT interface, [21][22][23] and it was adopted to fabricate high-performance normally off MIS-HEMTs maybe using the Si doping effect of LPCVD. 24 However, the Si donor control by tuning deposition source and its effect on the dynamic performance of the HEMTs has not been investigated.…”

mentioning

confidence: 99%

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

Song

Sun

et al. 2017

AIP Advances

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In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It’s indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

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Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

113

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Cited by 77 publications

References 19 publications

Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

Recent Advances in GaN‐Based Power HEMT Devices

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