“…Electrically tunable barium strontium titanate (BaxSr1-xTiO3) perovskite films, hereafter referred as BSTO, of the general stoichiometry ABO3 (A and B cations of different sizes) are of strong interest due to their appealing electrical properties. [1][2][3][4] As the films possess high relative permittivity r, low loss tangent BSTO investigated for dynamic random access memory (DRAM), 5 high voltage capacitors, 6 tunable filters 7 , microwave phase shifters 8,9 etc. Although semiconductors, liquid crystals, optical fibers, magnets, ceramics and ceramic nanocomposites 10 and many other alternative materials have been used for tunable devices, ferroelectrics in their paraelectric phase are far more effective, as they exhibit high dissipation factor (Q), consume negligible power, operate at high speeds and can be tuned with relatively low DC bias (<30 V).…”