2016
DOI: 10.1021/acs.chemmater.6b03368
|View full text |Cite
|
Sign up to set email alerts
|

High-Throughput Screening of Extrinsic Point Defect Properties in Si and Ge: Database and Applications

Abstract: Increased computational resources now make it possible to generate large data sets solely from first principles. Such “high-throughput” screening is employed to create a database of embedding enthalpies for extrinsic point defects and their vacancy complexes in Si and Ge for 73 impurities from H to Rn. Calculations are performed both at the PBE and HSE06 levels of theory. The data set is verified by comparison of the predicted lowest-enthalpy positions with experimental observations. The effect of temperature … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
5
0
1

Year Published

2017
2017
2021
2021

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 11 publications
(6 citation statements)
references
References 49 publications
0
5
0
1
Order By: Relevance
“…Ab initio HT computational methods are a powerful approach to identify new applicationspecific materials. 1,[8][9][10][11][12][13][14][15][16][17][18][19] Instead of investigating materials one at a time, such methods use algorithms to automate the calculations and analysis. However, the screening process can quickly require tremendous amounts of computational resources because (i) ab initio calculations, usually performed using density functional theory (DFT)-based methods, are computationally expensive, (ii) up to hundreds of DFT runs per compound can be required to compute some materials properties (e.g.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Ab initio HT computational methods are a powerful approach to identify new applicationspecific materials. 1,[8][9][10][11][12][13][14][15][16][17][18][19] Instead of investigating materials one at a time, such methods use algorithms to automate the calculations and analysis. However, the screening process can quickly require tremendous amounts of computational resources because (i) ab initio calculations, usually performed using density functional theory (DFT)-based methods, are computationally expensive, (ii) up to hundreds of DFT runs per compound can be required to compute some materials properties (e.g.…”
Section: Methodsmentioning
confidence: 99%
“…Ab initio HT computational methods are a powerful family of approaches to identify new application-specific materials. Recent papers made use of those approach to discover new materials for batteries, , thermo- and ferroelectrics, and other applications. Instead of investigating materials one at a time, such methods use algorithms to automate the calculations and analysis. However, the screening process can quickly require tremendous amounts of computational resources because (i) ab initio calculations, usually performed using density functional theory (DFT)-based methods, are computationally expensive, (ii) up to hundreds of DFT runs per compound can be required to compute some materials properties (e.g., anharmonic thermal conductivity , ), and (iii) the number of prospective candidates can easily climb into the hundreds of thousands.…”
Section: Methodsmentioning
confidence: 99%
“…Moreover, the understanding of processes and material properties will require the support of theory. In this context, the screening of extrinsic point defect properties in Si and Ge shown in the literature is a good example for the prediction of material properties, which helps to tailor a nanomaterial for a certain application . Furthermore, a very powerful tool to predict materials with interesting physical properties is machine learning. However, big data are required to get accurate extrapolations via machine learning, which again points out the importance of a detailed characterization of nanomaterials.…”
Section: Discussionmentioning
confidence: 99%
“…3b (elemental surface energies). Vacancy formation energies in semiconductors and insulators may be particularly difficult to correctly predict with FFs due to the existence of charge states [21][22][23] . The charge induced defect properties are captured well using DFT but can't be reproduced classically.…”
Section: Fig 2 Snapshot Of the Database Showing The Interactive Perio...mentioning
confidence: 99%