High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint lithography technology

Abstract

Next generation electronic devices like single electron transistors (SETs) operating at room temperature (RT) demand for high-resolution patterning techniques and simultaneously cost-effective, high-throughput manufacturing. Thereby, field-emission scanning probe lithography (FE-SPL) is a direct writing method providing high-resolution and high-quality nanopatterns. SET devices prepared by FE-SPL and plasma etching at cryogenic substrate temperature were shown to operate at RT [C. Lenk et al., Microelectron. Eng. 192, 77 (2018); Z. Durrani, M. Jones, F. Abualnaja, C. Wang, I. W. Rangelow, M. Kaestner, S. Lenk, C. Lenk, and A. Andreev, J. Appl. Phys. 124, 144502 (2018); I. W. Rangelow et al., J. Vac. Sci. Technol. B 34, 06K202 (2016)]. Nevertheless, FE-SPL lacks in writing speed and large area manufacturing capability required for industrial device manufacturing. This can be overcome by combining FE-SPL with nanoimprint lithography (NIL), which enables the replication of high-resolution features on large areas and provides high throughput. In this work, the authors will review a high-throughput process chain for RT-SET fabrication based on reproducing FE-SPL prepared masters by NIL and etching.

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

“…We demonstrated a complementary mix-and-match lithography combining standard electron beam lithography with a closed-loop FE-SPL method for proof-of-concept [61]. In addition, using active cantilever arrays enables scalability, further enhancing the throughput capability [91].…”

“…Calixarene molecular glass is a resist on which FE-SPL exceeds the limits of standard EBL. In this context, FE-SPL is a promising tool for future rapid nanoscale manufacturing [85][86][87] and high-resolution nanoimprint lithography template fabrication [91,93,94].…”

“…High-resolution and high-selectivity direct pattern transfer was demonstrated using 10 nm calixarene resist [86]. Its practical applicability was demonstrated by realizing roomtemperature single electron transistors [87][88][89][90][91].…”

Line edge roughness metrology software

“…14 Furthermore, SPL can be used for fabricating molds for nanoimprint lithography reducing further the limitation of serial processing. 15 After SPL patterning, a solubility change is observed in the exposed area resulting either in positive-tone patterning, if the exposed region becomes soluble, or in negative-tone patterning otherwise. 16 When the resist is exposed in negative-tone patterning, a latent image is observed on the resist before development.…”