High throughput lithography using thermal scanning probes

Rawlings, Colin; Spieser, Martin; Schwemmer, Christian; Kulmala, Tero S.; Ryu, Yu Kyoung; Bonanni, Simon; Duerig, Urs; Paul, P.; Knoll, Armin W.

doi:10.1109/transducers.2017.7994076

Cited by 8 publications

(9 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The thermal-scanning probe lithography fabrication method is attractive as it can be extended toward a large-scale highthroughput technology, which is essential for mass production 28 . The small recession between the Pt and Ag layers in Fig.…”

Section: Resultsmentioning

confidence: 99%

Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

et al. 2019

View full text Add to dashboard Cite

Here we show electrochemical metallization cells with compact dimensions, excellent electrical performance, and reproducible characteristics. An advanced technology platform has been developed to obtain Ag/SiO 2 /Pt devices with ultra-scaled footprints (15 × 15 nm 2), inter-electrode distances down to 1 nm, and a transition from the OFF to ON resistance state relying on the relocation of only few atoms. This technology permits a well-controlled metallic filament formation in a highly confined field at the apex of an atomic scale tip. As a consequence of this miniaturization process, we achieve set voltages around 100 mV, ultrafast switching times of 7.5 ns, and write energies of 18 fJ. Furthermore, we demonstrate very good cell-to-cell uniformity and a resistance extinction ratio as high as 6 • 10 5. Combined abinitio quantum transport simulations and experiments suggest that the manufactured structures exhibit reduced self-heating effects due to their lower dimensions, making them very promising candidates as next-generation (non-)volatile memory components.

show abstract

Section: Resultsmentioning

confidence: 99%

Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Finally, it is important to underline that here we have demonstrated that the entire FET can be fabricated by tc-SPL, from electrodes patterning 58 to bipolar doping, offering features which include in situ imaging of monolayer MoS 2 , no need of physical masks or markers, nanoscale-patterning resolution, and potential for scalability. Current tc-SPL throughput is similar to EBL 29 , but it can be further improved by multiplexing with thermal nano-probes arrays 28,63 , paving the way for integrated 2D electronic devices. tc-SPL nanopatterning.…”

Section: Discussionmentioning

confidence: 99%

Spatial defects nanoengineering for bipolar conductivity in MoS2

et al. 2020

View full text Add to dashboard Cite

Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithography (tc-SPL) with a flow-through reactive gas cell to achieve nanoscale control of defects in monolayer MoS 2. The tc-SPL produced defects can present either p-or n-type doping on demand, depending on the used gasses, allowing the realization of field effect transistors, and p-n junctions with precise sub-μm spatial control, and a rectification ratio of over 10 4. Doping and defects formation are elucidated by means of X-Ray photoelectron spectroscopy, scanning transmission electron microscopy, and density functional theory. We find that p-type doping in HCl/H 2 O atmosphere is related to the rearrangement of sulfur atoms, and the formation of protruding covalent S-S bonds on the surface. Alternatively, local heating MoS 2 in N 2 produces n-character.

show abstract

“…To overcome this barrier, the technology is being pushed towards hybrid thermal lithography where the benefits of fast laser-writing and high-resolution t-SPL are combined in a single tool: large areas of a temperaturesensitive resist can be rapidly modified with a laser and the areas of the same sample that require high resolution can be patterned by t-SPL using the same resist 43,62 . The development of new t-SPL systems with multiple cantilevers that can be simultaneously actuated is also ongoing and proof-of-principle experiments with linear arrays of up to ten cantilevers have been demonstrated 42,62 . Multiple t-SPL scan heads and parallel arrays with thousands of cantilevers similar to IBM's Millipede device would enable industrial manufacturing of advanced 3D photomasks and large area stamps for nanoimprint lithography.…”

Section: Discussionmentioning

confidence: 99%

“…t-SPL nanopatterns etched into thin Si 3 N 4 membranes can produce phase masks for electron beam and X-ray optics. Such phase masks, for example, generated highquality Vortex and Bessel electron beams in a transmission electron microscope (TEM) 62,63 or 3D Fresnel zone plates for X-ray diffraction optics 64 .…”

Section: Etch Transfer Of Grayscale Nanostructures From Ppa Into Othementioning

confidence: 99%

Thermal scanning probe lithography—a review

et al. 2020

View full text Add to dashboard Cite

Fundamental aspects and state-of-the-art results of thermal scanning probe lithography (t-SPL) are reviewed here. t-SPL is an emerging direct-write nanolithography method with many unique properties which enable original or improved nano-patterning in application fields ranging from quantum technologies to material science. In particular, ultrafast and highly localized thermal processing of surfaces can be achieved through the sharp heated tip in t-SPL to generate high-resolution patterns. We investigate t-SPL as a means of generating three types of material interaction: removal, conversion, and addition. Each of these categories is illustrated with process parameters and application examples, as well as their respective opportunities and challenges. Our intention is to provide a knowledge base of t-SPL capabilities and current limitations and to guide nanoengineers to the best-fitting approach of t-SPL for their challenges in nanofabrication or material science. Many potential applications of nanoscale modifications with thermal probes still wait to be explored, in particular when one can utilize the inherently ultrahigh heating and cooling rates.

show abstract

High throughput lithography using thermal scanning probes

Cited by 8 publications

References 18 publications

Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

Spatial defects nanoengineering for bipolar conductivity in MoS2

Thermal scanning probe lithography—a review

Contact Info

Product

Resources

About