For nearly two decades, the field of plasmonics1 - which studies the coupling of electromagnetic waves to the motion of free electrons in a metal2 - has sought to realize subwavelength optical devices for information technology3–6, sensing7,8, nonlinear optics9,10, optical nanotweezers11 and biomedical applications12. Although the heat generated by ohmic losses is desired for some applications (e.g. photo-thermal therapy), plasmonic devices for sensing and information technology have largely suffered from these losses inherent to metals13. This has led to a widespread stereotype that plasmonics is simply too lossy to be practical. Here, we demonstrate that these losses can be bypassed by employing “resonant switching”. In the proposed approach, light is only coupled to the lossy surface plasmon polaritons in the device’s off-state (in resonance) where attenuation is desired to ensure large extinction ratios and facilitate sub-ps switching. In the on state (out of resonance), light is prevented from coupling to the lossy plasmonic section by destructive interference. To validate the approach, we fabricated a plasmonic electro-optic ring modulator. The experiments confirm that low on-chip optical losses (2.5 dB), high-speed operation (>>100 GHz), good energy efficiency (12 fJ/bit), low thermal drift (4‰ K-1), and a compact footprint (sub-λ radius of 1 μm) can be realized within a single device. Our result illustrates the potential of plasmonics to render fast and compact on-chip sensing and communications technologies.

The performance of highly nonlinear organic electro-optic (EO) materials incorporated into nanoscale slots is examined. It is shown that EO coefficients as large as 190 pm/V can be obtained in 150 nm wide plasmonic slot waveguides but that the coefficients decrease for narrower slots. Possible mechanism that lead to such a decrease are discussed. Monte-Carlo computer simulations are performed, confirming that chromophore-surface interactions are one important factor influencing the EO coefficient in narrow plasmonic slots. These highly nonlinear materials are of particular interest for applications in optical modulators. However, in modulators the key parameters are the voltage-length product U_πL and the insertion loss rather than the linear EO coefficients. We show record-low voltage-length products of 70 Vµm and 50 Vµm for slot widths in the order of 50 nm for the materials JRD1 and DLD164, respectively. This is because the nonlinear interaction is enhanced in narrow slot and thereby compensates for the reduced EO coefficient. Likewise, it is found that lowest insertion losses are observed for slot widths in the range 60 to 100 nm.

Photodetectors compatible with CMOS technology have shown great potential in implementing active silicon photonics circuits, yet current technologies are facing fundamental bandwidth limitations. Here, we propose and experimentally demonstrate for the first time a plasmonic photodetector achieving simultaneously record-high bandwidth beyond 100 GHz, an internal quantum efficiency of 36% and low footprint. High-speed data reception at 72 Gbit/s is demonstrated. Such superior performance is attributed to the subwavelength confinement of the optical energy in a photoconductive based plasmonic-germanium waveguide detector that enables shortest drift paths for photogenerated carriers and a very small resistance-capacitance product. In addition, the combination of plasmonic structures with absorbing semiconductors enables efficient and highest-speed photodetection. The proposed scheme may pave the way for a cost-efficient CMOS compatible and low temperature fabricated photodetector solution for photodetection beyond 100 Gbit/s, with versatile applications in fields such as communications, microwave photonics, and THz technologies.

Here we show electrochemical metallization cells with compact dimensions, excellent electrical performance, and reproducible characteristics. An advanced technology platform has been developed to obtain Ag/SiO 2 /Pt devices with ultra-scaled footprints (15 × 15 nm 2), inter-electrode distances down to 1 nm, and a transition from the OFF to ON resistance state relying on the relocation of only few atoms. This technology permits a well-controlled metallic filament formation in a highly confined field at the apex of an atomic scale tip. As a consequence of this miniaturization process, we achieve set voltages around 100 mV, ultrafast switching times of 7.5 ns, and write energies of 18 fJ. Furthermore, we demonstrate very good cell-to-cell uniformity and a resistance extinction ratio as high as 6 • 10 5. Combined abinitio quantum transport simulations and experiments suggest that the manufactured structures exhibit reduced self-heating effects due to their lower dimensions, making them very promising candidates as next-generation (non-)volatile memory components.

The optical control of atomic relocations in a metallic quantum point contact is of great interest because it addresses the fundamental limit of "CMOS scaling". Here, by developing a platform for combined electronics and photonics on the atomic scale, we demonstrate an optically controlled electronic switch based on the relocation of atoms. It is shown through experiments and simulations how the interplay between electrical, optical, and light-induced thermal forces can reversibly relocate a few atoms and enable atomic photodetection with a digital electronic response, a high resistance extinction ratio (70 dB), and a low OFF-state current (10 pA) at room temperature. Additionally, the device introduced here displays an optically induced pinched hysteretic current (optical memristor). The photodetector has been tested in an experiment with real optical data at 0.5 Gbit/s, from which an eye diagram visualizing millions of detection cycles could be produced. This demonstrates the durability of the realized atomic scale devices and establishes them as alternatives to traditional photodetectors.