High-Throughput Electrical Characterization of Nanomaterials from Room to Cryogenic Temperatures

Abstract

We present multiplexer methodology and hardware for nanoelectronic device characterization. This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. We demonstrate the applicability of our approach on two archetypal nanomaterialsgraphene and semiconductor nanowiresintegrated with a GaAs-based multiplexer using wet or dry transfer methods. A graphene film grown by chemical vapor deposition is transferred and patterned into an array of individual devices, achieving 94% yield. Device performance is evaluated using data fitting methods to obtain electrical transport metrics, showing mobilities comparable to nonmultiplexed devices fabricated on oxide substrates using wet transfer techniques. Separate arrays of indium-arsenide nanowires and micromechanically exfoliated monolayer graphene flakes are transferred using pick-and-place techniques. For the nanowire array mean values for mobility μ FE = 880/3180 cm 2 V −1 s −1 (lower/upper bound), subthreshold swing 430 mV dec −1 , and on/off ratio 3.1 decades are extracted, similar to nonmultiplexed devices. In another array, eight mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Our results are a proof-ofconcept demonstration of a versatile platform for scalable fabrication and cryogenic characterization of nanomaterial device arrays, which is compatible with a broad range of nanomaterials, transfer techniques, and device integration strategies from the forefront of quantum technology research.

Giant Magnetoresistance in a Chemical Vapor Deposition Graphene Constriction

“… 60 , 61 Expansion to other nanomaterials is straightforward since nanowires, exfoliated 2D materials, and CVD-grown 2D materials can be transferred to the multiplexer using compatible fabrication methods. 16 The onset of the high resistance state studied here in graphene has been shown to occur at lower magnetic fields in devices with higher mobility and lower disorder. 1 , 11 , 53 The reduction of the magnetic field required may bring CVD-grown graphene devices into the realm of giant magnetoresistance devices and magnetic switches 62 and motivate the development of graphene-based magnetic field detection or magnetic texture mapping sensors with cryogenic readout.…”

“…The switch indicates multiplexer control circuitry. 16 (d) The red curve shows transfer characteristics as a function of back gate voltage at B = 0 T and T = 0.29 K. The black curve shows a fit using eq 1 . (e) Magnetic field dependence of d R /d V G as a function of V G .…”

“…A conducting path is defined within the 2DEG from one input to 16 outputs, and individual outputs are chosen by surface addressing gates. Multiplexer layout, fabrication, and operation details are described in ref ( 16 ), although the device measured here is different from that in ref ( 16 ). Source–drain contacts (Ti/Au) are fabricated on the multiplexer before transferring a monolayer graphene film grown by chemical vapor deposition onto Cu.…”

“…A primary application of multiplexing is the statistical analysis of large data sets and identifying trends in data ensembles. 16 , 29 , 30 Statistical analysis identifies general behavior, allowing outliers to be selected and studied in detail. Our present work highlights the capability of our multiplexing system for an in depth study of the physics of such channels using numerous techniques including magnetic field, source–drain bias, and temperature from which one can obtain a detailed understanding of the fundamental phenomena.…”

Recent Advances on SEM-Based In Situ Multiphysical Characterization of Nanomaterials

“…To thoroughly understand the reason why such a small amount of nanostructured polyaniline (PANIs) can tremendously enhance the electrical conductivity of the ECCs, SEM was used to characterize the phase separation process and the self-assembly process in electrical conductive composite (ECC) films [ 45 ]. In a most recent work [ 98 ], a high-throughput electrical characterization of nanotechnology device arrays was enabled by SEM techniques in selection of purely single nanowires. SEM-based in situ characterization techniques could also be applied to tracking the structural reconstruction of the catalysts; in a recent perspective, Zhu et al [ 99 ] established an “ in-situ probing map” and offered guidelines for the successful development of next-generation efficient electrocatalysts.…”