High thermoelectric performance in Cu₂Se superionic conductor with enhanced liquid-like behaviour by dispersing SiC

Abstract

Nano-SiC in Cu2Se could facilitate liquid-like behavior to remarkably enhance electrical transport and suppress thermal conductivity simultaneously.

Promising and Eco‐Friendly Cu2X‐Based Thermoelectric Materials: Progress and Applications

“…This is closely consistent with the DFT calculation results . Although the n H of the pristine Cu 2 Se is close to this range, bond engineering and introducing secondary phases can help to better approach this level.…”

“…Comparing with nanoengineering, introducing secondary phases can reduce κ l of Cu 2 X‐based thermoelectric materials more effectively. Astonishingly, ultralow κ l of Cu 2 Se (<0.1 W m −1 K −1 ) has been reported leading to zT values of >2 from 873 to 1000 K, such as CNT and CuInSe 2 . Regardless of strategies focusing on reducing l through phonon scattering, pores can not only reduce l through phonon‐scattering, but also reduce C v and v to realize further κ l reduction, leading to subsequently increased zT …”

“…Homogeneously distributed secondary phases can also significantly reduce κ l of Cu 2 X. For example, introducing SiC, CuGaSe 2 , nanoboron, carbon‐coated nanoboron, CNTs or graphene networks into Cu 2 Se matrix can effectively reduce κ l and subsequently enhance zT. Similarly, CNTs, carbon, and In 2 S 3 can also reduce κ l of Cu 2 S, as well as the Cu 1.15 In 2.29 Te 4 in Cu 2 Te .…”

“…Currently, Tak et al found that introducing additional Cu into Cu 2 Se can reduce the room‐temperature m * of β‐Cu 2 Se. Meanwhile, introducing additional SiC, Ag‐doping in Cu 2 Se and Se‐doping in Cu 2 S can increase room‐temperature m *.…”

Development and understanding of solvothermal synthesized copper chalcogenide thermoelectric materials

“…Currently, Tak et al [167] found that introducing additional Cu into Cu2Se can reduce the roomtemperature m * of β-Cu2Se. Meanwhile, introducing additional SiC, [224] Ag-doping [213] in Cu2Se and Se-doping [172] in Cu2S can increase room-temperature m * . doped Cu2Se (as Cu2-ySe1-xBrx) [211] and those with over-stoichiometric Cu (as Cu2+xSe) [167] comparing with the pristine Cu2Se under the temperature (T) of 300 K. [72] (b) nH-dependent zT (nH at 800 K is estimated based on the temperature dependency shown in avoid the dramatic influence of S-doping on κl) [171] and Cu-vacancy engineered Cu2Se (as Cu2-xSe) [204] comparing with the pristine Cu2Se.…”