High-Temperature Voltage and Current References in Silicon Carbide CMOS

Rahman, Ashfaqur; Francis, A. Matthew; Ahmed, Shamim; Akula, Sai Kiran; Holmes, Jim; Mantooth, Alan

doi:10.1109/ted.2016.2550580

Cited by 30 publications

(19 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results are higher than that of SiC MOSFET devices with operating temperature of about 200 0 C due to associated oxide interface problems [42]. In addition, SiC CMOS circuits tested to operate at 300 0 C under probe and 540 0 C when packaged was reported in [48].…”

Section: Sic Jfet Application In Inverter and Boost Converter Circuitmentioning

confidence: 86%

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Ehiagwina

Kehinde

Afolabi

et al. 2016

IJATES

View full text Add to dashboard Cite

Abstract-properties of Silicon Carbide Junction Field EffectTransistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si). A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

show abstract

Section: Sic Jfet Application In Inverter and Boost Converter Circuitmentioning

confidence: 86%

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Ehiagwina

Kehinde

Afolabi

et al. 2016

IJATES

View full text Add to dashboard Cite

show abstract

“…When monolithic integration of the ASIC part with the sensor, i.e., MEMS, part is considered, one dies has to be packaged. Some research is conducted on a CMOS SiC process [36] and the monolithic integration of front-end electronics with a pressure sensor for silicon technology is demonstrated in literature, see Fig. 1.4.…”

Section: Sic System Integration: Advantages and Challengesmentioning

confidence: 99%

From Si Towards SiC Technology for Harsh Environment Sensing

Middelburg

Driel

Zhang

2019

Sensor Systems Simulations

View full text Add to dashboard Cite

Since it is obvious that Moore's Law in its classical way of scaling, which proved to be powerful over the last decades, is coming to an end, alternative routes towards technological progress are investigated [1]. One of the main fundamental reasons for this is that the smallest features size in newest technology nodes is approaching the level of only a few atom layers. As a result, the development and implementation of technology nodes based on a scaled-down version of the previous one, gets increasingly more expensive. An alternative approach to ensure technological progress of the microelectronics world and the semiconductor industry is described by a trend called "More than Moore" (MtM) [2], based on diversification and integration. In terms of diversification, materials beyond silicon can be considered for the development of sensors and electronics, while the integration aspects come to expression by combining different parts of a system in a smart and optimal way. Wide bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC) are mature for power applications, but for other applications such as lowvoltage (Bi)CMOS and/or VLSI they are still in the research phase. By integrating electronics monolithically on a sensor chip, improved system performance can be obtained by having signal amplifications close to the physical transducer. The integration aspects are strongly related to the packaging of microelectronic and

show abstract

“…With the development of electronic equipment toward miniaturization, integration and multifunction, the service temperature of chip is also higher and higher, and some extreme working environment can exceed 600°C (Rahman et al, 2016;Roccaforte et al, 2014;Chand et al, 2014;Drevin-Bazin et al, 2014). Therefore, a kind of interconnection materials which have long-term reliability in high temperature environment are critically needed.…”

Section: Introductionmentioning

confidence: 99%

Microstructure evolution and shear strength of full Cu₃Sn- microporous copper composite joint by thermo-compression bonding

Sun

Pan

Liu

et al. 2021

SSMT

View full text Add to dashboard Cite

Purpose The purpose of this paper is to quickly manufacture full Cu3Sn-microporous copper composite joints for high-temperature power electronics applications and study the microstructure evolution and the shear strength of Cu3Sn at different bonding times. Design/methodology/approach In this paper, a novel structure of Cu/composite solder sheet/Cu was designed. The composite solder sheet was made of microporous copper filled with Sn. The composite joint was bonded by thermo-compression bonding under pressure of 0.6 MPa at 300°C. The microstructure evolution and the growth behavior of Cu3Sn at different bonding times were observed by electron microscope and metallographic microscope. The shear strength of the joint was measured by shear machine. Findings At initial bonding stage the copper atoms in the substrate and the copper atoms in the microporous copper dissolved into the liquid Sn. Then the scallop-liked Cu6Sn5 phases formed at the interface of liquid Sn/microporous copper and liquid Sn/Cu substrates. During the liquid Sn changing to Cu6Sn5 phases, Cu3Sn phases formed and grew at the interface of Cu6Sn5/Cu substrates and Cu6Sn5/microporous copper. After that the Cu3Sn phases continued to grow and the Cu3Sn-microporous copper composite joint with a thickness of 100 µm was successfully obtained. The growth rule of Cu3Sn was parabolic growth. The shear strength of the composite joints was about 155 MPa. Originality/value This paper presents a novel full Cu3Sn-microporous copper composite joint with high shear strength for high-temperature applications based on transient liquid phase bonding. The microstructure evolution and the growth behavior of Cu3Sn in the composite joints were studied. The shear strength and the fracture mechanism of the composite joints were studied.

show abstract

High-Temperature Voltage and Current References in Silicon Carbide CMOS

Cited by 30 publications

References 33 publications

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

From Si Towards SiC Technology for Harsh Environment Sensing

Microstructure evolution and shear strength of full Cu₃Sn- microporous copper composite joint by thermo-compression bonding

Contact Info

Product

Resources

About

High-Temperature Voltage and Current References in Silicon Carbide CMOS

Cited by 30 publications

References 33 publications

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

From Si Towards SiC Technology for Harsh Environment Sensing

Microstructure evolution and shear strength of full Cu3Sn- microporous copper composite joint by thermo-compression bonding

Contact Info

Product

Resources

About

Microstructure evolution and shear strength of full Cu₃Sn- microporous copper composite joint by thermo-compression bonding