High-temperature stability of electron transport in semiconductors with strong spin-orbital interaction

Tomaka, G.; Grendysa, J.; Śliż, P.; Becker, C. R.; Talar-Wojnarowska, Renata; Stadler, A. W.; Sheregii, E. M.

doi:10.1103/physrevb.93.205419

Cited by 12 publications

(4 citation statements)

References 39 publications

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“…On the other hand, the MT technique records the total conductivity. In the case when the bulk of the sample behaves like a semiconductor or a semi-metal the contribution of surface and bulk conductivity to the total conductivity can be difficult to determine [16]. The article strengthens the efforts of the cited and other research groups [12] in the development of the MT technique as a useful tool for the study of subtle physical phenomena occurring in mature materials or their heterostructures including the identification of TI features in 3D HgCdTe heterostructures.…”

Section: Introductionmentioning

confidence: 57%

Metrology and Measurement Systems

Śliż,

Sankowska,

Bobko

et al. 2021

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The paper covers some measurement aspects of transport of electrons through metals and semiconductors in magnetic field -magnetotransport -allowing for the determination of electrical parameters characteristic of three-dimensional (3D) topological insulators (TI) (i.e. those that behave like an insulator inside their volume and have a conductive layer on their surface). A characteristic feature of the 3D TI is also a lack of differences between the chemical composition of the conductive surface and the interior of the material tested and the fact that the electron states for its surface conductivity are topologically protected. In particular, the methods of generating strong magnetic fields, obtaining low temperatures, creating electrical contacts with appropriate geometry were presented, and the measurement methods were reviewed. In addition, the results of magnetotransport measurements obtained for two volumetric samples based on the HgCdTe compound grown with the molecular beam epitaxy method are presented.

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Section: Introductionmentioning

confidence: 57%

Metrology and Measurement Systems

Śliż,

Sankowska,

Bobko

et al. 2021

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“…Так как исследованные объекты представляют собой полупроводниковые структуры, необходимо иметь в виду, что элементы структуры могут в значительной мере влиять на изучаемые явления. Неравновесные процессы в области топологического гетероперехода в структуре, т. е. контакта полупроводников с прямым (тривиальная фаза) и инверсным (топологическая фаза) энергетическими спектрами [26][27][28], также могут вносить вклад в регистрируемый фотоотклик. Нельзя исключить тот факт, что обнаруженный нелокальный отклик связан с присутствием топологических состояний в области интерфейсов структуры.…”

Section: обсуждение результатовunclassified

Особенности транспорта в топологической фазе Hg-=SUB=-0.87-=/SUB=-Cd-=SUB=-0.13-=/SUB=-Te в условиях терагерцового фотовозбуждения

Galeeva¹,

Казаков²,

Artamkin³

et al. 2020

Физика И Техника Полупроводников

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In this paper, we report on photoconductivity induced by high-power laser radiation with a frequency of 2 THz in Hg0.87Cd0.13Te-based epitaxial structures. Experimental results obtained for a set of the samples with variable geometric parameters allow us to determine the photoresponse features of both bulk and nonlocal contributions to the net response. We show that the persistent photoconductivity effect originates from the non-equilibrium processes related to the bulk carrier excitation.

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“…In last decade (from 2007 [2]]) a new property of this material, namely, inverted band structure caused by strong spin-orbital interaction, forms a new opportunity for this material -possibility to produce topological phase on surface. By this way, the Topological Insulators (TI) based on the HgCdTe became actual in 3D case [3].…”

Section: Introductionmentioning

confidence: 99%