“…For the large-area PSCs device, improving the PCE, the rst method is to change the chemical composition of perovskite, adjusting its band gap and increasing the charge generation. 3,29,31,35,38,46 The second approach is to increase the grain size of perovskite, decreasing the cracks and pinholes, that reduces the bulk defect recombination and electric leakage, and increase V oc . [35][36][37][38] The third approach is interface modication, which reduces interface contact resistance, and reduce interface and surface recombination, and increase J sc .…”